6533b85dfe1ef96bd12be6b1

RESEARCH PRODUCT

Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

M. DebbichiS. Ben RejebL. DebbichiMoncef Said

subject

Modal gainMaterials scienceBand gapbusiness.industrySuperlatticeMid infraredCondensed Matter PhysicsLaserElectronic Optical and Magnetic Materialslaw.inventionFormalism (philosophy of mathematics)lawMaterials ChemistryOptoelectronicsElectrical and Electronic EngineeringAnisotropybusinessLasing threshold

description

We use a standard 8 × 8 envelope-function approximation (EFA) formalism taking into account the effect of anisotropic and other interface (IF) interactions to investigate the electronic and optical properties of short-period superlattice laser structures (InAs/GaSb/InSb)×N grown on a GaSb substrate. We find that the band gaps numerically calculated at different temperatures give a good fitting with the experimental data confirming the model used. The calculated modal gain demonstrates that it is possible to achieve lasing operation at room temperature for N  > 12 and for a reasonable total optical loss αt = 25 cm−1. Therefore, the 8 × 8 EFA formalism with IF design serves as a tool to model the optoelectronic properties of InAs/GaSb/InSb SPSLs.

yearjournalcountryeditionlanguage
2011-07-25Semiconductor Science and Technology
https://doi.org/10.1088/0268-1242/26/9/095010