6533b85efe1ef96bd12c04ce
RESEARCH PRODUCT
Memory cell structure integrated on semiconductor
S. LombardoC. GerardoIsodiana CrupiM. Melanottesubject
NULLMemory cellSi nanostructuresSilicon rich oxideSettore ING-INF/01 - ElettronicaCMOS technologynon volatile memoriesdescription
This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-01-01 |