6533b85efe1ef96bd12c05ab

RESEARCH PRODUCT

High Temperature SiC Blocking Diodes for Solar Array

J. MillanVicente EsteveXavier JordàP. GodginonEsteban Sanchis-kildersJose JordanEnrique MasetJ. Bta. EjeaAgustin Ferreres

subject

Materials sciencebusiness.industryPhotovoltaic systemWide-bandgap semiconductorSchottky diodeTemperature measurementlaw.inventionchemistry.chemical_compoundReliability (semiconductor)chemistrylawSolar cellSilicon carbideOptoelectronicsbusinessDiode

description

This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170°C to 270°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward and reverse performances.

yearjournalcountryeditionlanguage
2009-02-012009 Spanish Conference on Electron Devices
https://doi.org/10.1109/sced.2009.4800529