0000000000240283

AUTHOR

Xavier Jordà

showing 3 related works from this author

SiC Power Switches Evaluation for Space Applications Requirements

2016

We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…

010302 applied physicsMaterials scienceTechnology pushbusiness.industryMechanical EngineeringElectrical engineeringJFET02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower (physics)Stress (mechanics)Reliability (semiconductor)Mechanics of Materials0103 physical sciencesMOSFETElectronic engineeringGeneral Materials SciencePower MOSFET0210 nano-technologybusinessRadiation hardeningMaterials Science Forum
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300°C SiC Blocking Diodes for Solar Array Strings

2009

Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…

Wire bondingMaterials sciencebusiness.industryMechanical EngineeringPhotovoltaic systemchemistry.chemical_elementSchottky diodeCondensed Matter PhysicsMetal–semiconductor junctionMetalchemistry.chemical_compoundchemistryMechanics of MaterialsAluminiumvisual_artvisual_art.visual_art_mediumSilicon carbideOptoelectronicsGeneral Materials SciencebusinessDiodeMaterials Science Forum
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High Temperature SiC Blocking Diodes for Solar Array

2009

This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170°C to 270°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward …

Materials sciencebusiness.industryPhotovoltaic systemWide-bandgap semiconductorSchottky diodeTemperature measurementlaw.inventionchemistry.chemical_compoundReliability (semiconductor)chemistrylawSolar cellSilicon carbideOptoelectronicsbusinessDiode2009 Spanish Conference on Electron Devices
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