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RESEARCH PRODUCT
SiC Power Switches Evaluation for Space Applications Requirements
J. C. MorenoPhillippe GodignonSilvia MassettiEnrique MasetD. LopezVictor SolerXavier Jordàsubject
010302 applied physicsMaterials scienceTechnology pushbusiness.industryMechanical EngineeringElectrical engineeringJFET02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower (physics)Stress (mechanics)Reliability (semiconductor)Mechanics of Materials0103 physical sciencesMOSFETElectronic engineeringGeneral Materials SciencePower MOSFET0210 nano-technologybusinessRadiation hardeningdescription
We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we have carried out a first batch of total dose and heavy ions radiation experiments on 3 types of power switches: normally-on JFET, normally-off JFET and power MOSFET. Due to its higher stability and radiation hardness, the normally-on JFET is today the more adequate and reliable switch for the space applications.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-05-01 | Materials Science Forum |