6533b85efe1ef96bd12c0970
RESEARCH PRODUCT
Atomic Layer Deposition of Osmium
Jani HämäläinenEsa PuukilainenMikko RitalaMarkku LeskeläTimo Sajavaarasubject
010302 applied physicsMaterials scienceta114General Chemical EngineeringInorganic chemistryAnalytical chemistryNucleationchemistry.chemical_element02 engineering and technologyGeneral ChemistryChemical vapor deposition021001 nanoscience & nanotechnologyOsmocene01 natural scienceschemistry.chemical_compoundAtomic layer depositionCarbon filmchemistry0103 physical sciencesMaterials ChemistryDeposition (phase transition)OsmiumThin film0210 nano-technologyta116description
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-12-09 | Chemistry of Materials |