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RESEARCH PRODUCT
Thermal effects on the growth by metal organic chemical vapour deposition of TiO2 thin films on (100) GaAs substrates
Luc ImhoffOlivier HeintzM. SacilottiLucien SaviotA. BrevetF. FabreguetteM.c. Marco De LucasSylvie Bourgeoissubject
AnataseMaterials scienceScanning electron microscopeAnalytical chemistrySurfaces and InterfacesGeneral ChemistryChemical vapor depositionCondensed Matter PhysicsSurfaces Coatings and Filmssymbols.namesakeX-ray photoelectron spectroscopyPhase (matter)Materials ChemistrysymbolsDeposition (phase transition)Thin filmRaman spectroscopydescription
Abstract TiO 2 thin films were deposited on (100) GaAs substrates by LP-MOCVD with deposition temperatures ( T d ) ranking from 450 to 750 °C. The structure of these layers was studied by X-ray diffraction (XRD) and Raman spectroscopy. The growth of the TiO 2 anatase phase was observed for T d T d >600 °C. Finally, X-ray photoelectron spectrometry (XPS) and secondary ion mass spectroscopy (SIMS) experiments showed the presence of small quantities of Ga and As through the whole film thickness, slightly increasing at the surface of the layers. This result was related to the SEM observations and explained by considering the growth conditions.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-03-01 | Surface and Coatings Technology |