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RESEARCH PRODUCT
Radiation-induced defects and their recombination processes in the x-ray storage phosphor BaBr2:Eu2
M. SecuJ.-m. SpaethUldis RogulisStefan Schweizersubject
ChemistryExcitonX-rayGeneral Materials SciencePhosphorAtomic physicsCondensed Matter PhysicsElectronic band structureLuminescenceRecombinationMicrowaveMagnetic fielddescription
The recombination processes in the x-ray storage phosphor BaBr2:Eu2+ were investigated by optical and magneto-optical methods. A structure-sensitive investigation of the defects involved in the recombination processes was performed by detecting the microwave-induced changes in the recombination luminescence in a high magnetic field. F centres as well as VK hole centres are created after x-irradiation at low temperatures. The low-energy recombination band peaking at about 460 nm is due to F–VK centre recombinations, whereas the two high energy bands at 282 and 315 nm are probably due to recombinations of self-trapped excitons.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-03-17 | Journal of Physics: Condensed Matter |