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RESEARCH PRODUCT
Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon
Lutz NasdalaAndreas KronzDieter GramboleGhislain Trullenquesubject
Materials scienceSiliconAnalytical chemistrychemistry.chemical_element02 engineering and technologySubstrate (electronics)010502 geochemistry & geophysics01 natural sciencesFluencesymbols.namesakeGeochemistry and PetrologyBack-scattered electron imagesRadiation damageIrradiation0105 earth and related environmental sciencessiliconMicrobeam021001 nanoscience & nanotechnologyCrystallographyGeophysicsIon implantationchemistryelectron back-scatter diffractionradiation damageRaman spectroscopysymbols0210 nano-technologyRaman spectroscopydescription
Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate with the degree of irradiation damage; all irradiated areas were higher in BSE than the surrounding host. Because there were no variations in the chemical composition and, with that, no Z contrast in our sample, this observation again supports the hypothesis that structural radiation damage may strongly affect BSE images of solids.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-10-01 |