Search results for "Microbeam"

showing 10 items of 10 documents

Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing

2013

Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.

Materials scienceIon beamta221Analytical chemistryHardware_PERFORMANCEANDRELIABILITYIon beam lithographyProton beam writingFront and back endsComputer Science::Hardware ArchitectureData acquisitionOpticsMicroscopyHardware_INTEGRATEDCIRCUITSElectrical and Electronic EngineeringField-programmable gate arrayHardware_REGISTER-TRANSFER-LEVELIMPLEMENTATIONta114business.industryta1182MicrobeamCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPhysics::Accelerator PhysicsbusinessMicroelectronic Engineering
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The Ti-influence on the tourmaline color

2008

Titanium was examined in different black tourmalines by spectrophotometric analyses in the region between 12500 and 27000 cm-1 (800-370 nm) using a microscope spectrophotometer MPV-5P, Leitz (Germany), and chemically analyzed on an electron microprobe Camebax Microbeam, Cameca (France) in WDS Mode. Fourteen tourmaline samples with their face oriented parallel to the principal axis, cut and polished down to thin sections, showed polarized spectra of two broad absorption bands at approximately 14000 cm-1 (715 nm) and 24000 cm-1 (417 nm). Precision thickness measurements were used to calculate the absorption coefficients α. For the absorption around 24000 cm-1, a linear correlation was observe…

tourmalineMicroscopeTourmalineChemistryAnalytical chemistrychemistry.chemical_elementGeneral ChemistryElectron microprobeMicrobeamIntervalence charge transferSpectral linelaw.inventionlawIVCT effecttitaniumAbsorption (electromagnetic radiation)Titanium
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Minor changes in the macrocyclic ligands but major consequences on the efficiency of gold nanoparticles designed for radiosensitization

2016

International audience; Many studies have been devoted to adapting the design of gold nanoparticles to efficiently exploit their promising capability to enhance the effects of radiotherapy. In particular, the addition of magnetic resonance imaging modality constitutes an attractive strategy for enhancing the selectivity of radiotherapy since it allows the determination of the most suited delay between the injection of nanoparticles and irradiation. This requires the functionalization of the gold core by an organic shell composed of thiolated gadolinium chelates. The risk of nephrogenic systemic fibrosis induced by the release of gadolinium ions should encourage the use of macrocyclic chelat…

BiodistributiontumorMaterials scienceGadoliniumchemistry.chemical_elementNanoparticleContext (language use)Nanotechnology02 engineering and technology[CHIM.THER]Chemical Sciences/Medicinal Chemistry010402 general chemistry01 natural sciences[ CHIM ] Chemical Sciencesnephrogenic systemic fibrosis[CHIM]Chemical SciencesGeneral Materials ScienceChelationratbiodistributionradiotherapyrenal clearance[ CHIM.THER ] Chemical Sciences/Medicinal Chemistry021001 nanoscience & nanotechnologyCombinatorial chemistry0104 chemical scienceschemistrymri contrast agentsColloidal goldSurface modification0210 nano-technologySelectivitydihydrolipoic acidmicrobeam radiation-therapy9l gliosarcoma
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Development of economic MeV-ion microbeam technology at Chiang Mai University

2017

Developing high technologies but in economic manners is necessary and also feasible for developing countries. At Chiang Mai University, Thailand, we have developed MeV-ion microbeam technology based on a 1.7-MV Tandetron tandem accelerator with our limited resources in a cost-effective manner. Instead of using expensive and technically complex electrostatic or magnetic quadrupole focusing lens systems, we have developed cheap MeV-ion microbeams using programmed L-shaped blade aperture and capillary techniques for MeV ion beam lithography or writing and mapping. The programmed L-shaped blade micro-aperture system consists of a pair of L-shaped movable aperture pieces which are controlled by …

microbeamPhysics::Accelerator PhysicsMeV ionL-shaped blade aperturelitografia (grafiikka)tapered glass capillaryComputer Science::Other
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020

Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…

Nuclear and High Energy PhysicsMaterials sciencemicrobeamsilicon carbide (SiC) vertical double-diffused power(VD)-MOSFETleakage current degradation01 natural sciencesDie (integrated circuit)chemistry.chemical_compoundpuolijohteet0103 physical sciencesMOSFETSilicon carbideNuclear Physics - ExperimentPower semiconductor deviceElectrical and Electronic EngineeringPower MOSFETsingle-event effect (SEE)010308 nuclear & particles physicsbusiness.industryionisoiva säteilyHeavy ion; leakage current degradation; microbeam; silicon carbide (SiC) vertical double-diffused power(VD)-MOSFET; single-event effect (SEE); single-event leakage current (SELC)JFETSELCMicrobeamSiC VD-MOSFET620single event effectsäteilyfysiikkaNuclear Energy and Engineeringchemistryheavy-ionOptoelectronicsddc:620Heavy ionbusinesssingle-event leakage current (SELC)Voltage
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Development of the Jyväskylä microbeam facility

2012

Abstract A new microbeam facility is being constructed at the 1.7 MV Pelletron Accelerator in Jyvaskyla. The facility is designed for easy upgrading and incorporates a number of innovative features. Initially, it is based on a Heidelberg doublet with a design capability of a 3 × 5 μm beamspot at PIXE intensities and later upgraded to nanobeam performance. A thermal-expansion compensated rigid frame mounted on a mechanically isolated floor section is used to support the ion optical components. A compact-post focusing electrostatic deflector is used for high linearity beam scanning. This together with a novel time-stamped data collection (TDC) allows dynamic effects in IBIC, fluorescence blea…

Nuclear and High Energy PhysicsMaterials scienceta114business.industryRigid frameDetectorSolid angleMicrobeamSecondary electronsIonlaw.inventionPelletronOpticsOptical microscopelawbusinessInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Clinical microbeam radiation therapy with a compact source: specifications of the line-focus X-ray tube

2020

Highlights • Line-focus X-ray tubes are suitable for clinical microbeam radiation therapy (MRT). • A modular high-voltage supply safely enables high electron beam powers. • An electron accelerator was designed to generate an eccentric focal spot. • We simulated a peak-to-valley dose ratio above 20 for single-field MRT. • Microbeam arc therapy spares healthy brain tissue compared to single-field MRT.

Equivalent uniform doselcsh:Medical physics. Medical radiology. Nuclear medicineMaterials scienceCompact radiation sourcelcsh:R895-920Monte Carlo methodElectronlcsh:RC254-282030218 nuclear medicine & medical imaginglaw.inventionCompact Radiation Source ; Equivalent Uniform Dose ; Line-focus X-ray Tube ; Microbeam Arc Therapy ; Microbeam Radiation Therapy ; Modular High-voltage Supply03 medical and health sciences0302 clinical medicineOpticslawRadiology Nuclear Medicine and imagingFocal Spot SizeOriginal Research ArticleLine-focus X-ray tubeRange (particle radiation)Radiationbusiness.industryMicrobeam arc therapyMicrobeamHot cathodeModular high-voltage supplyX-ray tubeequipment and supplieslcsh:Neoplasms. Tumors. Oncology. Including cancer and carcinogens030220 oncology & carcinogenesisCathode raybusinessMicrobeam radiation therapyPhysics and Imaging in Radiation Oncology
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Development of economic MeV-ion microbeam technology at Chiang Mai University

2017

Abstract Developing high technologies but in economic manners is necessary and also feasible for developing countries. At Chiang Mai University, Thailand, we have developed MeV-ion microbeam technology based on a 1.7-MV Tandetron tandem accelerator with our limited resources in a cost-effective manner. Instead of using expensive and technically complex electrostatic or magnetic quadrupole focusing lens systems, we have developed cheap MeV-ion microbeams using programmed L-shaped blade aperture and capillary techniques for MeV ion beam lithography or writing and mapping. The programmed L-shaped blade micro-aperture system consists of a pair of L-shaped movable aperture pieces which are contr…

Nuclear and High Energy PhysicsMaterials scienceIon beamAperturemicrobeam02 engineering and technologyIon beam lithography01 natural scienceslaw.inventionOpticslaw0103 physical sciencesQuadrupole magnetInstrumentationLithography010302 applied physicsbusiness.industryta1182MicrobeamMeV ionL-shaped blade aperture021001 nanoscience & nanotechnologytapered glass capillaryComputer Science::OtherLens (optics)Physics::Accelerator Physicslithography0210 nano-technologybusinessBeam (structure)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Effects of irradiation damage on the back-scattering of electrons: silicon-implanted silicon

2007

Radiation damage in an (initially crystalline) silicon wafer was generated by microbeam implantation with 600 keV Si+ ions (fluence 5 x 1014 ions/cm²). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth <1 μm), and at implant substrate temperatures of below 130 °C, the treatment has caused complete amorphization. Back-scattered electron (BSE) images exhibited that observed BSE intensities correlate…

Materials scienceSiliconAnalytical chemistrychemistry.chemical_element02 engineering and technologySubstrate (electronics)010502 geochemistry & geophysics01 natural sciencesFluencesymbols.namesakeGeochemistry and PetrologyBack-scattered electron imagesRadiation damageIrradiation0105 earth and related environmental sciencessiliconMicrobeam021001 nanoscience & nanotechnologyCrystallographyGeophysicsIon implantationchemistryelectron back-scatter diffractionradiation damageRaman spectroscopysymbols0210 nano-technologyRaman spectroscopy
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