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RESEARCH PRODUCT
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
Jordan CalcuttHermann StieglauerAndrew BarnesAli ZadehVeronique Ferlet-cavroisChristian PoiveyArto JavanainenMichele MuschitielloPawel KupscKay-obbe Vosssubject
Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessdescription
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the failure occurs in the body of the capacitor.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-02-01 | IEEE Transactions on Nuclear Science |