6533b86cfe1ef96bd12c8ad9
RESEARCH PRODUCT
Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
Mikael BroasMervi Paulasto-kröckelTimo SajavaaraAndreas GraffHua JiangVesa Vuorinensubject
Materials sciencePhysics and Astronomy (miscellaneous)Siliconchemistry.chemical_element02 engineering and technologySubstrate (electronics)ceramicsmikroskopia01 natural sciencespiezoelectric filmskeramiikkaStress (mechanics)Atomic layer depositionTHIN-FILMSALUMINUM-OXIDE0103 physical sciencesWATERCRYSTAL-STRUCTURECeramicThin filmComposite materialSILICON010302 applied physicsta213ta114HYDROGEN021001 nanoscience & nanotechnologyDIFFUSIONdermatologychemistrythin filmsTransmission electron microscopyvisual_artvisual_art.visual_art_mediummicroscopyGROWTHihotautioppiohutkalvot0210 nano-technologyLayer (electronics)description
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at least two distinct mechanisms can cause blistering in ALD films. Published by AIP Publishing. Peer reviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-10-02 |