6533b86dfe1ef96bd12ca0e9
RESEARCH PRODUCT
Post UV irradiation annealing of E’ centers in silica controlled by H2 diffusion
Franco Mario GelardiS. CostaRoberto BoscainoMarco Cannassubject
PhotonAbsorption spectroscopyAnnealing (metallurgy)ChemistryKineticsAnalytical chemistryRadiationCondensed Matter PhysicsLaserElectronic Optical and Magnetic Materialslaw.inventionAmorphous silicon Hydrogenation silicon a-Si:HlawMaterials ChemistryCeramics and CompositesIrradiationElectron paramagnetic resonancedescription
Abstract We investigate the isothermal annealing of E′ centers generated by UV photons (266 nm) of a pulsed Nd:YAG laser in two natural silica types differing for their OH content. Electron spin resonance and absorption spectra recorded at room temperature at different delays from the laser exposure evidenced a partial reduction of E′ centers, more pronounced in the wet silica. These post irradiation kinetics complete within 10 5 s, regardless the silica type, and they are consistent with a diffusion limited reaction between the E′ centers and the molecular hydrogen H 2 . Analysis of our data is done by theoretical fits using the Waite's equation and compared with the H 2 diffusion parameters reported in literature. Finally, the interplay between the under radiation generation and the post irradiation annealing of E′ centers was investigated through repetitive laser exposures, which evidenced the higher resistance of wet silica to induced laser damage.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-06-01 |