6533b86efe1ef96bd12caf8a
RESEARCH PRODUCT
Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
Marchese NSolano ACazzaniga CFrost C DTomarchio EPace Csubject
Power MOSFETs Neutron SEBSettore ING-IND/20 - Misure E Strumentazione Nuclearidescription
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-01-01 |