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RESEARCH PRODUCT
Negative magnetoresistance of ultra-narrow superconducting nanowires in the resistive state
K. Yu. Arutyunovsubject
PhysicsSuperconductivityResistive touchscreenCondensed matter physicsMagnetoresistanceSuperconducting wireCondensed Matter - SuperconductivityFOS: Physical sciencesEnergy Engineering and Power TechnologySlip (materials science)engineering.materialCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsMagnetic fieldSuperconductivity (cond-mat.supr-con)Phenomenological modelengineeringQuasiparticleElectrical and Electronic Engineeringdescription
We present a phenomenological model qualitatively explaining negative magnetoresistance in quasi-one-dimensional superconducting channels in the resistive state. The model is based on the assumption that fluctuations of the order parameter (phase slips) are responsible for the finite effective resistance of a narrow superconducting wire sufficiently close to the critical temperature. Each fluctuation is accompanied by an instant formation of a quasi-normal region of the order of the non-equilibrium quasiparticle relaxation length 'pinned' to the core of the phase slip. The effective time-averaged voltage measured in experiment is a sum of two terms. First one is the conventional contribution linked to the rate of the fluctuations via the Josephson relation. Second term is the Ohmic contribution of this quasi-normal region. Depending on material properties of the wire, there might be a range of magnetic fields where the first term is not much affected, while the second term is effectively suppressed contributing to the experimentally observed negative magnetoresistance.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-02-01 |