6533b86efe1ef96bd12cc8f0

RESEARCH PRODUCT

Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

Ana CrosA. García-cristóbalJ. A. Budagosky

subject

III-V semiconductorsMaterials scienceCondensed matter physicsPhononUNESCO::FÍSICAGallium compoundsGeneral Physics and AstronomyHeterojunctionAluminium compounds ; Gallium compounds ; III-V semiconductors ; Phonons ; Raman spectra ; Semiconductor quantum dots ; Thermal expansionAtmospheric temperature rangeCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials Sciencesymbols.namesakeLaser linewidth:FÍSICA [UNESCO]Quantum dotsymbolsPhononsSemiconductor quantum dotsRaman spectraThermal expansionRaman spectroscopyAluminium compoundsRaman scatteringWurtzite crystal structure

description

Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es

yearjournalcountryeditionlanguage
2008-11-01Journal of Applied Physics
https://doi.org/10.1063/1.3006892