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RESEARCH PRODUCT
In situ monitoring of pulsed laser indium–tin-oxide film deposition by optical emission spectroscopy
Claudio CaliRoberto MacalusoMauro Moscasubject
Materials sciencebusiness.industryAnalytical chemistryPlasmaIndium–tin-oxide films Pulsed laser deposition Optical emission spectroscopy Plasma diagnosticsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsAnalytical ChemistryIndium tin oxidePulsed laser depositionElectrical resistivity and conductivityOptoelectronicsPlasma diagnosticsPLD ITO optical spectroscopyThin filmbusinessInstrumentationSpectroscopyDeposition (law)Line (formation)description
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. © 2001 Elsevier Science B.V. All rights reserved.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-06-01 | Spectrochimica Acta Part B: Atomic Spectroscopy |