6533b86ffe1ef96bd12cdb86

RESEARCH PRODUCT

Temperature elevations in endosseous dental implants and the peri-implant bone during diode-laser-assisted surface decontamination

subject

description

The aim of the study was to investigate temperature elevations in the implant surface and the peri-implant bone during simulated surface decontamination of endosseous dental implants with an 809 nm semiconductor laser. Stepped cylinder implants were inserted into bone blocks cut from resected pig femurs. An artificial peri-implant bone defect provided access for the irradiation of the implant surface. A 600 micron optic fiber was used at a distance of 0.5 mm from the implant surface. Power output varied between 0.5 and 2.5 W in the cw-mode. Power density was between 176.9 and 884.6 Wcm -2 . The bone block was placed into a 37 degree(s)C water bath in order to simulate in vivo thermal conductivity and diffusitivity of heat. Temperature elevations during irradiation were registered by means of K-Type thermocouples and a short wave thermocamera. In a time and energy-dependant manner, the critical threshold of 47 degree(s)C was exceeded in the peri-implant bone. Surface peak temperatures in the focus of up to 427.8 degree(s)C were observed. Implant surface decontamination with an 809 nm GaAlAs laser must be limited to a maximum of 10 s at an energy density below 350 wcm -2 to ensure a safe clinical treatment.