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RESEARCH PRODUCT
Heteroepitaxial growth of Co on W(110) investigated by scanning tunneling microscopy
Hans-joachim ElmersM. GetzlaffM. Pratzersubject
Materials sciencebusiness.industrylaw.inventionCrystallographyOpticslawMonolayerDislocationStructured modelScanning tunneling microscopebusinessLayer (electronics)Embedded atom modelBar (unit)description
We investigated the growth of Co submonolayers on bcc W(110) by scanning tunneling microscopy. Due to the strong Co-W bonding, monolayers of Co grow in equilibrium pseudomorphically on W(110) until the monolayer is almost completed. When excess atoms are deposited atop the pseudomorphic monolayer, it transforms to a close-packed (cp) monolayer with misfit dislocation lines parallel to $[11\ifmmode\bar\else\textasciimacron\fi{}0]$ (Nishiyama-Wassermann orientation). The structure of the cp monolayer, as concluded from atomically resolved STM images, deviates from the rigid hard-sphere model of a cp (111) layer. Details of the structure are compared to a structure model previously proposed by van der Merwe et al. based on the embedded atom model (EAM).
year | journal | country | edition | language |
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2003-04-28 | Physical Review B |