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RESEARCH PRODUCT
Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments
F. SchreiberH. MeerC. SchmittR. RamosE. SaitohL. BaldratiM. Kläuisubject
Condensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale Physics530 PhysicsGeneral Physics and AstronomyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology530 Physik01 natural sciences0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)Condensed Matter::Strongly Correlated Electrons010306 general physics0210 nano-technologydescription
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a non-magnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-12-09 |