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RESEARCH PRODUCT
Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition
Mark SalyTimo SajavaaraCharles H. WinterThiloka C. AriyasenaKnisley Thomassubject
Materials scienceta114Formic acidGeneral Chemical EngineeringHydrazineInorganic chemistryAnalytical chemistrychemistry.chemical_elementGeneral ChemistryCopperchemistry.chemical_compoundAtomic layer depositionchemistryElectrical resistivity and conductivityMaterials ChemistryAtomic layer epitaxyGrowth rateThin filmta116description
The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 A/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-09-27 | Chemistry of Materials |