6533b870fe1ef96bd12ceab0

RESEARCH PRODUCT

Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

D. R. BallB. D. SierawskiK. F. GallowayR. A. JohnsonM. L. AllesA. L. SternbergA. F. WitulskiR. A. ReedR. D. SchrimpfArto JavanainenJ-m. Lauenstein

subject

SiCcross-sectionSEBFITheavy ionpowerMOSFETneutronsäteilyfysiikkasilicon carbidetransistoritfailure in timeMREDMonte Carlosingle event burnout

description

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed

http://urn.fi/URN:NBN:fi:jyu-201912135275