6533b870fe1ef96bd12cf05c
RESEARCH PRODUCT
Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS
Sylvie BourgeoisJérôme GuillotLuc ImhoffM. SacilottiOlivier HeintzF. FabreguetteM.c. Marco De LucasBruno Domenichinisubject
Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementMineralogySurfaces and InterfacesGeneral ChemistryChemical vapor depositionCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidchemistry.chemical_compoundchemistryX-ray photoelectron spectroscopySputteringThin filmTitanium isopropoxideTinTitaniumdescription
Abstract TiN(O)–TiO 2 thin films were prepared on Si(1 0 0) by the low pressure organo metallic chemical vapor deposition (LP-OMCVD) method, using ammonia and titanium isopropoxide as precursors. In order to complete previous characterizations, an Ar + bombardment/XPS coupled study was carried out. This method is based on the fact that the behavior of a compound towards an ion bombardment is a function of its composition. In particular, Ar + bombardment of TiO 2 (whatever its form) leads to a preferential sputtering of oxygen atoms with subsequent reduction of titanium and formation of Ti 3+ and Ti 2+ easily detectable by XPS from a significant broadening of the Ti 2p lines. In the opposite, no broadening of the Ti 2p lines is observed for an Ar + bombardment of TiN. Then, with this method, we succeed in showing that films obtained at high temperature (≥700°C) contain only a TiN x O y phase which is isomorphic to TiN. In the coatings, synthesized at low temperatures (≤650°C) amorphous TiO 2 has been evidenced.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-06-01 | Applied Surface Science |