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RESEARCH PRODUCT
Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
Teresa BenMaría Ujué GonzálezArturo PonceY. GonzalezLuisa GonzálezSergio I. MolinaDavid FusterJuan P. Martínez-pastorsubject
Work (thermodynamics)Materials scienceOptical fiberPhysics and Astronomy (miscellaneous)Substrate (electronics)Optoelectronic deviceslaw.inventionEmissionOptical fibreslawIndium compoundsArsenic compoundsSize effectPhosphorus compoundsRange (particle radiation)business.industrySelf-assemblyWavelengthSemiconductor quantum wiresOptoelectronicsSelf-assemblybusinessSurface reconstructionLayer (electronics)Surface reconstructiondescription
The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-08-23 |