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RESEARCH PRODUCT
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
Arto JavanainenHenrique Vazquez MuinosKai NordlundKenneth F. GallowayMarek TurowskiRonald D. Schrimpfsubject
mallintaminenpower semiconductor devicesionitsilicon carbidepuolijohteetionisoiva säteilySchottky diodesmodelingion radiation effectsdescription
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-01-01 |