6533b870fe1ef96bd12d03cf
RESEARCH PRODUCT
Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications
A. CaddemiM. SanninoPatrizia Livrerisubject
Noise temperatureMaterials sciencebusiness.industryTransistorY-factorHigh-electron-mobility transistorFixtureNoise figureNoise (electronics)law.inventionlawScattering parametersElectronic engineeringOptoelectronicsbusinessdescription
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1994-12-01 | 44th ARFTG Conference Digest |