6533b871fe1ef96bd12d240b

RESEARCH PRODUCT

Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques

F. P. La MantiaMonica SantamariaF. Di Quarto

subject

Materials scienceAdmittancea-SC schottky barrierPassivationEIS spectraGeneral Chemical EngineeringSchottky barrierAnalytical chemistryGeneral ChemistryElectrolyteCharacterization (materials science)chemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica Applicatapassive filmchemistrypassive film; a-SC schottky barrier; EIS spectraDensity of statesGeneral Materials ScienceSurface layerPhosphoric acid

description

Abstract Thin Nb2O5 anodic films (∼20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.

yearjournalcountryeditionlanguage
2007-01-01Corrosion Science
https://doi.org/10.1016/j.corsci.2006.05.019