6533b872fe1ef96bd12d374c

RESEARCH PRODUCT

Detailed photoluminescence study of vapor deposited Bi2S3 films of different surface morphology

Rudolf BrüggemannGottfried H. BauerNiklas NiliusGerhard JakobSebastian Ten HaafHendrik Sträter

subject

Materials sciencePhotoluminescenceYield (engineering)Absorption spectroscopybusiness.industryBand gapCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsSemiconductorRadiative transferOptoelectronicsThin filmbusinessAbsorption (electromagnetic radiation)

description

authorenWe present a temperature- and intensity-dependent photoluminescence (PL) study of the binary semiconductor on the mm-scale and a laterally resolved PL measurement with a resolution of nm. The films can show a rather rough surface with needles and flakes of with different orientations as well as very flat and smooth surface morphology. Despite a band gap of eV the films show a splitting of quasi-Fermi levels (QFL) of meV at room temperature. By means of temperature-dependent PL we have located several radiative and non-radiative defect states in the band gap. For a better understanding of this thin film semiconductor a full analysis of the laterally resolved PL measurement including the integrated PL yield, energetic position of the PL maximum, optical band gap, splitting of quasi-Fermi levels and defect absorption of both sample morphologies is presented to avoid misinterpretation of experimental data.

yearjournalcountryeditionlanguage
2014-08-12physica status solidi (b)
https://doi.org/10.1002/pssb.201451271