6533b872fe1ef96bd12d4108

RESEARCH PRODUCT

Cathodoluminescence mechanism of crystalline Gd2SiO5:Ce

V.d. RyzhikovJ.l. JansonsI.a. TaleS.f. BurochasZ.a. Rachko

subject

PhotoluminescenceAbsorption spectroscopyChemistryGeneral EngineeringAnalytical chemistryCathodoluminescencePhotoluminescence excitationPhoton energyExponential decayMolecular physicsExcitationIon

description

Complex luminescence decay kinetics have been observed in Gd2SiO5:Ce crystals under electron beam irradiation. Absorption and photoluminescence excitation spectra, decay kinetics in various excitation bands over a wide range of photon energies from 3.6 to 7.0 eV in the temperature region from 80 to 400 K as well as the spectra of the glow curve creation efficiency at 80 K are examined. It is shown that the free electronic excitations produced, depending on the absorbed photon energy, have different recombination mechanisms finally leading to the radiative transitions between the 5d2E configuration and the 4f configuration of the Ce3+ ion. At hvexc < 6.1 eV a single exponential decay caused by direct recombination via a 5d2E configuration of the Ce3+ ion takes place, whereas at hvexc ⩾ 6.1 eV an additional slow exponential recombination process occurs. The latter is represented by the two-stage recombination via either the quasi-local 6s level of Ce3+ lying in the conduction band of the localized states arising due to the perturbation of the host lattice by an impurity Ce3+ ion.

https://doi.org/10.1016/1359-0189(93)90059-i