Search results for " Barrier"
showing 10 items of 540 documents
Experimental investigation of the cutting temperature when turning with coated indexable inserts
1999
Abstract This paper deals with an experimental investigation into the different factors which influence the temperature which occur at the coating/substrate–chip interface when machining a medium carbon steel and an austenitic stainless steel. Both flat-faced and grooved inserts coated with TiC, TiC/TiN and TiC/Al 2 O 3 /TiN were used. A standard K-type thermocouple embedded in the workpiece was used to convert measured efms to the interfacial temperature. Some optimal coating structures for high speed machining of these steels corresponding to the minimum interface temperature were selected. In particular, it was observed that by the proper selection of the thermal properties of the coatin…
Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films
2015
Abstract Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limits of validity of such theory have not yet been explored. The classic semi-analytical solution is obtained under the constraint of constant electronic density of states (DOS) distribution in the mobility gap. In order to take into account the presence of a DOS variable in energy, a semi-empirical corrective power law was introduced in this paper. It is shown that the equations derived for thick films maintain their validity also in the case of thin films, provided that the space charge region width remains lower than 70% of the whole film thickness. A new expression based on the use o…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier
2015
We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps …
AMORPHOUS SEMICONDUCTOR-ELECTROLYTE JUNCTION. A NEW INTERPRETATION OF THE IMPEDANCE DATA OF AMORPHOUS SEMICONDUCTING FILMS ON METALS.
1986
On the basis of the theory of amorphous semiconductor Schottky barrier an equivalent electrical circuit of the amorphous oxide film/electrolyte interface is proposed.—The analytical expressions for the equivalent conductance and capacitance of the barrier are reported in the hypothesis of a constant density of states within the mobility gap.—According to this model, the semiconducting properties and the impedance behaviour at different frequencies of anodic oxide films on Niobium are interpreted by taking into account the amorphous nature of the films.—An explanation for the anomalous behaviour of the Mott-Schottky plots usually observed with amorphous anodic oxide films is presented.—The p…
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Thermal stability under air of tungsten–titanium diffusion barrier layer between silica and platinum
2014
Abstract The present work investigated the thermal stability of tungsten–titanium diffusion barrier layers intercalated between SiO 2 substrate and platinum thin film. The resulting structures were annealed under air in the temperature range 400–600 °C for annealing times up to 100 h. Chemical and structural characterizations at different stages of the treatment evidenced several phenomena occurring during annealing under air, especially the complete oxidation of the adhesive layer, the diffusion of tungsten oxide through platinum film at particle boundaries as well as the sublimation process of tungsten oxide. The results of film surface chemistry and microstructure were correlated with di…
Comparative study of air and vacuum annealing atmosphere towards Pt/Ti–W/SiO2 stability
2013
Abstract The thermal stability of Pt/Ti–W/SiO2 system was studied after annealing under air or vacuum in the present work. A Ti–W adhesive film (30 at. % Ti) was deposited on a SiO2 substrate followed by a thicker Pt layer. Depositions were performed using DC magnetron sputtering. The whole as-deposited films are metallic with a columnar growth of platinum deposit which totally wets the substrate. Whatever the atmosphere is, annealing at 500 °C for 12 h does not change the platinum state but modifies the morphology of platinum particles, the lateral average size of which increasing from less than 10 nm up to ca. 75 nm. Besides, a noticeable diffusion of metallic tungsten through Pt film is …
First-principles calculations of the initial incorporation of carbon into flat and stepped Pd surfaces
2010
We employ density-functional-theory calculations to examine carbon adsorption and diffusion in Pd bulk, and on Pd(111) and Pd(211) surfaces. Different possible subsurface and on-surface structures are explored and the most stable structures are analyzed. We calculate various diffusion paths: lateral diffusion on a surface, migration to a subsurface region, and within the first interlayer. Our calculations show in accordance with the earlier theoretical results that on Pd(111) carbon prefers to adsorb on octahedral interstitial sites. On Pd(211) the fourfold hollow site under the step is energetically the most favorable one and the second best sites are the octahedral sites. The calculations…
Focus on the Essential: Extracting the Decisive Energy Barrier of a Complex Process
2019
Molecular processes at surfaces can be composed of a rather complex sequence of steps. The kinetics of even seemingly simple steps are demonstrated to depend on a multitude of factors, which prohibits applying a simple Arrhenius law. This complexity can make it challenging to experimentally determine the kinetic parameters of a single step. However, a molecular-level understanding of molecular processes such as structural transitions requires elucidating the atomistic details of the individual steps. Here, a strategy is presented to extract the energy barrier of a decisive step in a very complex structural transition by systematically addressing all factors that impact the transition kineti…