Search results for " CIRCUIT"
showing 10 items of 634 documents
Fault-Tolerant Application Mapping on to ZMesh topology based Network-on-Chip Design
2020
This paper proposes Particle Swarm Optimization (PSO) based fault-tolerant application mapping on to ZMesh topology based Network-on-Chip (NoC) design. Permanent faults in application cores has been considered and performed application mapping using PSO. The major contribution of this paper is to find out the best position for the spare core to be placed in the network using PSO. Experimentations have been carried out by scaling the ZMesh network size and percentage of network faults. The results show that the proposed approach leads to minimum overhead in communication cost over fault-free result.
Active snubber network design and implementation on the primary side of an isolated Ćuk converter realizing soft-switching for efficiency …
2008
This paper describes the process of improving the efficiency of an existing isolated DC/DC converter based on CUK topology with secondary side synchronous rectification, by means of the introduction of an active snubber network on the primary side. The snubber circuit reduces to zero the switching losses during the off-time interval of secondary SR. In particular, the efficiency improvement is due to the elimination of the primary MOSFET Coss output capacitance losses, and mainly of the reverse recovery losses on the secondary SR MOSFET. However, the insertion of the active snubber creates itself additional losses in the circuit, and therefore to measure the really introduced benefit it is …
Designing Frame Relay WAN Networks with Trade-Off between Link Cost and Performance
2014
This paper is focused on the problem of designing a Wide Area Network topology with trade-off between link cost and response time to users. The L2 technology chosen for the research is a Frame Relay based solution. The link capacities in the network and the routes used by packets are determined in a way to minimize network cost and response time at the same time. In FR networks link capacity corresponds directly to CIR parameter which makes the presented numerical results very useful in practice, especially during preliminary network design in the Design Phase of the PPDIOO methodology.
Transient cortical circuits match spontaneous and sensory-driven activity during development.
2020
At the earliest developmental stages, spontaneous activity synchronizes local and large-scale cortical networks. These networks form the functional template for the establishment of global thalamocortical networks and cortical architecture. The earliest connections are established autonomously. However, activity from the sensory periphery reshapes these circuits as soon as afferents reach the cortex. The early-generated, largely transient neurons of the subplate play a key role in integrating spontaneous and sensory-driven activity. Early pathological conditions—such as hypoxia, inflammation, or exposure to pharmacological compounds—alter spontaneous activity patterns, which subsequently in…
Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
2020
Here we provide a perspective concept of neurohybrid memristive chip based on the combination of living neural networks cultivated in microfluidic/microelectrode system, metal-oxide memristive devices or arrays integrated with mixed-signal CMOS layer to control the analog memristive circuits, process the decoded information, and arrange a feedback stimulation of biological culture as parts of a bidirectional neurointerface. Our main focus is on the state-of-the-art approaches for cultivation and spatial ordering of the network of dissociated hippocampal neuron cells, fabrication of a large-scale cross-bar array of memristive devices tailored using device engineering, resistive state program…
Noise parameters of HEMTs: analysis of their properties from a circuit model approach
1996
Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model to derive the analytical expressions for the device noise parameters F0, Γ0 and N in terms of the electrical elements associated with the basic equivalent circuit of an HEMT. Analyses such expressions to establish some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are included.
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies
1998
Abstract This paper is focused on the performance of the noise resistance Rn of HEMTs at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of Rn.
Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures
1996
In analog signal processing at microwave frequencies the noise performance of active devices is of fundamental importance for the accurate design of low-noise amplifiers. To this aim, the determination of the four noise parameters F O , Γ O (complex variable) and Rn has to be accomplished together with the usual scattering parameter measurements vs. frequency. In addition, the dependence of the device performance vs. temperature is of interest for circuit applications characterized by harsh environmental conditions. In this work the noise behavior of high electron mobility transistors has been investigated by means of measurements and modeling in the 2-18 GHz frequency range and as a functi…
Analytical-Numerical Localization of Hidden Attractor in Electrical Chua’s Circuit
2013
Study of hidden oscillations and hidden chaotic attractors (basin of attraction of which does not contain neighborhoods of equilibria) requires the development of special analytical-numerical methods. Development and application of such methods for localization of hidden chaotic attractors in dynamical model of Chua’s circuit are demonstrated in this work.
Hidden attractors and multistability in a modified Chua’s circuit
2021
The first hidden chaotic attractor was discovered in a dimensionless piecewise-linear Chua’s system with a special Chua’s diode. But designing such physical Chua’s circuit is a challenging task due to the distinct slopes of Chua’s diode. In this paper, a modified Chua’s circuit is implemented using a 5-segment piecewise-linear Chua’s diode. In particular, the coexisting phenomena of hidden attractors and three point attractors are noticed in the entire period-doubling bifurcation route. Attraction basins of different coexisting attractors are explored. It is demonstrated that the hidden attractors have very small basins of attraction not being connected with any fixed point. The PSIM circui…