Search results for " GAP"
showing 10 items of 811 documents
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …
Dependence of the lattice parameters and the energy gap of zinc-blende-type semiconductors on isotopic masses.
1996
The dependence of the ${\mathit{E}}_{0}$ direct gap of Ge, GaAs, and ZnSe on isotopic masses at low temperatures has been investigated. Contributions of the variation of the lattice parameter to the gap shift of the binary compounds have been evaluated by using a volume-dependent lattice dynamics, while local empirical pseudopotential techniques have been employed to calculate gap shifts due to electron-phonon interaction. The dependence of these terms on the lattice-dynamical model and on the q\ensuremath{\rightarrow}0 extrapolation of the pseudopotential form factors has been investigated. The contributions of the optical and acoustical modes to the isotopic shift are analyzed. The result…
Existence and gap-bifurcation of multiple solutions to certain nonlinear eigenvalue problems
1993
IN THIS PAPER we study: (i) a class of operator equations in an abstract Hilbert space; and (ii) the L2-theory of certain nonlinear Schrodinger equations which can be viewed as special cases of (i). In order to describe the type of abstract nonlinear eigenvalue problems to be discussed, consider a real Hilbert space H with scalar product (* , *) and norm II.11 and let S be a (not necessarily bounded) positive self-adjoint linear operator in li. We write S in the form
Structure of the space of reducible connections for Yang-Mills theories
1990
Abstract The geometrical structure of the gauge equivalence classes of reducible connections are investigated. The general procedure to determine the set of orbit types (strata) generated by the action of the gauge group on the space of gauge potentials is given. In the so obtained classification, a stratum, containing generically certain reducible connections, corresponds to a class of isomorphic subbundles given by an orbit of the structure and gauge group. The structure of every stratum is completely clarified. A nonmain stratum can be understood in terms of the main stratum corresponding to a stratification at the level of a subbundle.
Massless bound-state excitations and the Schwinger mechanism in QCD
2011
The gauge invariant generation of an effective gluon mass proceeds through the well-known Schwinger mechanism, whose key dynamical ingredient is the nonperturbative formation of longitudinally coupled massless bound-state excitations. These excitations introduce poles in the vertices of the theory, in such a way as to maintain the Slavnov-Taylor identities intact in the presence of massive gluon propagators. In the present work we first focus on the modifications induced to the nonperturbative three-gluon vertex by the inclusion of massless two-gluon bound-states into the kernels appearing in its skeleton-expansion. Certain general relations between the basic building blocks of these bound-…
Pressure-induced phase transition and bandgap collapse in the wide-bandgap semiconductor InTaO4
2016
A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond-anvil cell with ab initio calculations. High-pressure optical-absorption measurements were also carried out. The high-pressure phase has a monoclinic structure that shares the same space group with the low-pressure phase (P2/c). The structure of the high-pressure phase can be considered as a slight distortion of an orthorhombic structure described by space group Pcna. The phase transition occurs together with a unit-cell volume collapse and an electronic band-gap collapse o…
Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques
2003
We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found broad application in semiconductor lasers and photonic integrated circuits (PICs). Extending such technology to GaInNAs/GaAs structures is highly desirable due to the technologically advantageous properties of this material system. Here, we investigate well-characterized GaInNAs quantum well material which has been annealed "to saturation" before QWI processing to allow unambiguous interpretation of results. After RTA at 700 degreesC for similar …
Quenching of bandgaps by flow noise.
2009
We report an experimental study of acoustic effects produced by wind impinging on noise barriers based on two‐dimensional sonic crystals with square symmetry. We found that the attenuation strength of sonic‐crystal‐bandgaps decreases for increasing values of low speed. A quenching of the acoustic bandgap appears at a certain speed value that depends of the barrier filling ratio. For increasing values of low speed, the data indicate that the barrier becomes in a sound source because of its interaction with the wind. We conclude that flow noise has paramount importance in designing acoustic barriers based on sonic crystals. [Work supported by Spanish AECI.]
La traducción literaria y la brecha de paralaje: reflexiones a partir de un cuestionario piloto
2010
La investigación social se ha movido históricamente entre oposiciones conceptuales que el construccionismo sociológico intenta superar. Mediante el análisis de las respuestas y los problemas planteados por un cuestionario piloto dirigido a traductores de literatura, se tratan una serie de planteamientos aplicables a la investigación sociológica de la traducción literaria. Se hace especial hincapié en la indefinición como grupo de los traductores literarios y se plantea la utilidad del concepto “brecha de paralaje” (Slavoj Žižek) como método de análisis interdisciplinar y dialéctico. Historically, social research has alternated between conceptual opposites that social constructionism tries t…