Search results for " Graphene"

A novel approach to prevent graphene oxide re-aggregation during the melt compounding with polymers

2015

Abstract The technology for the preparation of polymer-GO nanocomposites was investigated by studying the structure-properties relationships of two different systems, based on PA6 and EVA, fabricated by using different preparation methods, i.e. melt mixing, wet phase inversion, and the combination of the two. The morphology of nanocomposites resulted dramatically influenced by the technique adopted and showed to be the critical variable affecting the physical properties of the materials. Finally, the mechanical and dynamic-mechanical of the nanocomposites were improved by using the hybrid technique combining the two procedures.

Adiabatic versus Non-Adiabatic Electron Transfer at 2D Electrode Materials

2021

<div><div><div><p>Outer-sphere electron transfer (OS-ET) is a cornerstone elementary electrochemical reaction, yet microscopic understanding is largely based on idealized theories, developed in isolation from experiments that themselves are often close to the kinetic (diffusion) limit. Focusing on graphene as-grown on a copper substrate as a model 2D material/metal-supported electrode system, this study resolves the key electronic interactions in OS-ET, and identifies the role of graphene in modulating the electronic properties of the electrode/electrolyte interface. An integrated experimental-theoretical approach combining co-located multi-microscopy, centered on sc…

Electrochemical exfoliation-streamline method for synthesis of nitrogen doped graphene

2021

The authors gratefully acknowledge financial support from the Latvian Council of Science, Project LZP FLPP No. LZP-2018/1 0194, and the Institute of Solid State Physics, University of Latvia that as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2026-2017-TeamingPhase2 under Grant Agreement No. 739508, Project CAMART2.

Electrical and optical properties of Graphene Field-Effect Transistors (GFETs) fabricated on sapphire

Fabrication and analysis of the layout impact in Graphene Field Effect Transistors (GFETs)

2016

In this work we focused on the analysis of Graphene Field Effect Transistor (GFET) microwave parameters dependence on geometries. In particular, a statistical, experimental investigation of the cut-off frequency (ft) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families on the same chip were fabricated, each one made of 10 identical (same geometry) devices. The analysis of the measured data shows that ft is both Δ and Lg dependent, and that there exists an optimal region in Δ and Lg design space.

Microwave parameters dependence on Graphene Field Effect Transistors (GFETs) dimensions

2016

Graphene is a relatively new material whose unique properties have attracted significant interest for its use in electronic and photonic applications. In particular, field effect has been proved in graphene samples and this feature, together with the high carrier mobility observed, makes graphene an interesting solution for high frequency electronics. In our work, we performed a statistical analysis in order to evaluate the microwave parameters dependence on Graphene Field Effect Transistors (GFETs) dimensions. In more detail, for the first time, we studied the behavior of the cut-off frequency (ft) and of the output impedance (Zout) at varying both the gate-drain/gate-source distance (Δ) a…

Impact of GFETs geometries on RF performances

2016

Graphene is a relatively new material whose unique properties have attracted significant interest for its use in electronic and photonic applications. In particular, field effect has been proved in graphene samples and the observed high carrier mobility makes graphene an interesting solution for high frequency electronics. In this work, we focused on the analysis of microwave parameters dependence on geometries in Graphene Field Effect Transistors (GFETs). In particular, a statistical, experimental investigation of the cut-off frequency (fT) and of the output impedance (Zout) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families wer…

Infrared detection in multifunctional graphene-based transistors

2016

In the last years great attention has been paid to graphene-based devices for optoelectronic applications such as photodetection. In this work, we report on Graphene Field Effect Transistors (GFETs) photoelectrical response due to the photo-transistor effect. Photoelectrical measurements were performed using a 1.55 μm erbium fiber laser. Optical measurements as a function of both the incident laser power and the DC bias of the fabricated devices have been carried out and show that photocurrent increases with the power of the IR beam illuminating the sample.

Radiofrequency performances of different Graphene Field Effect Transistors geometries

2016

In this work, we investigated on microwave parameters geometry dependence in Graphene Field Effect Transistors (GFETs). A DC and RF characterization of the fabricated GFETs has been performed. The parametric analysis was carried out on 24 GFET families fabricated on the same chip and differing only for the channel length (Δ) and the gate length (Lg). In order to obtain a statistical average, each family included ten devices with the same geometry.Our study demonstrates that the output resistance and the cut-off frequency depend on both Δ and Lg. As expected, Rout increases with the graphene channel surface thus confirming the good quality of the fabrication procedures. An optimum region whi…

Photocurrent generation in Graphene Field Effect Transistors (GFETs)

2016

In this work, we focused on the study of Graphene Field Effect Transistors (GFETs) photoelectrical response due to the combination of photovoltaic and photo-thermoelectric effects. The technological steps for the transistors fabrication together with their electro-optic response will be presented. Measurements were performed by using a 405 nm laser diode with AM modulation at 1.33 KHz shined onto the sample under test. GFETs electrical output signals were measured by using a lock-in amplifier synchronized to the same reference frequency of the laser driver. This gave us the possibility to evaluate the optical characteristics as a function of both the incident laser power and the static pola…