Search results for " High-Energy"
showing 10 items of 49 documents
On the metal distribution in the system GeTe−Sb2Te3
1988
The structures of GeSb2Te4, Ge2Sb2Te5 and GeSb4Te7 are not determined completely by means of classical X-ray or electron diffraction studies. We have measured the Mossbauer parameters of121Sb in these compounds as well as in their binary constituent Sb2Te3 as an attempt to improve our knowledge on the question.
Structural modulations and phase transitions in β-eucryptite: an in-situ TEM study
1999
Beta-eucryptite as grown by the flux method has been investigated by in-situ cold- and hot-stage transmission electron microscopy (TEM). Using electron diffraction and dark-field TEM imaging, we found no evidence for the merohedral twinning that accompanies structural collapse at the β-to-α-quartz transition, suggesting a true hexagonal symmetry for the aluminosilicate framework of β-eucryptite. Selected-area electron diffraction (SAED) patterns exhibited a variety of incommensurate structures along the three a axes with an average modulation period of about 6.5 a. These modulated structures arise from superperiodic stacking parallel to (100) of two structural units with different Li config…
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
2014
We report on the design, the growth by MBE and the optical and morphological characterization of metamorphic InAs/InGaAs quantum dots (QD) with a density low enough to allow single dot characterization without the need of complex litographic steps to isolate single QDs. InAs sub-critical coverages were deposited on InxGa1-xAs metamorphic buffers (MBs) and the transition from 2D growth to 3D island nucleation was monitored by reflection high energy electron diffraction (RHEED). We discuss the fundamental differences of the sub-critical growth method compared with the Stranski-Krastanow one, also by considering available theoretical models. AFM confirmed that the density of QDs can be control…
ALEPH: a Detector for Electron-Positron Annihilations at LEP
1990
Process-centred Software Engineering Environments (PSEE) are the most recent generation of environments supporting software development activities. Most of PSEE are based on mechanisms promoting enforcement and automation of process activities. In this kind of mechanisms the process models are prescribed in a detailed and complete way. But the experience shows that supporting processes is more concerned with the flexibility of guidance offered during the process performance than with enforcement of a collection of predefined process models. In this paper, we present a solution to support strategic processes in a PSEE by providing a flexible guidance during process enactment.
Reflection high energy electron diffraction as a tool in cluster deposition experiments
2010
Reflection high energy electron diffraction (RHEED) is used to study the structure and orientation of mass-filtered iron clusters upon deposition ontoW(110). The present setup enables in situ investigations during deposition and thermal annealing. Particles as small as 2 nm at low density on the surface can be studied. The experiments reveal that larger particles with a diameter of about 13 nm are randomly oriented on the substrate with a preferred tendency to rest on their surface facets. Thermal annealing leads to a partial realignment and a significant flattening of the particles. In contrast 2 nm particles are found to align spontaneously in an epitaxial manner on W(110). Thermodynamic …
Preparation and structural analysis of Fe2+xTi1−x thin films in the C14 Laves phase stability range
2002
Abstract We report the epitaxial growth of single phase (0 0 1)-oriented thin films of Fe2+xTi1−x in the C14 Laves phase stability range using molecular beam epitaxy (MBE). The growth was studied by reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The onset temperature for epitaxial growth and the temperature range for improved crystalline coherence were identified. From X-ray reflectometry analysis the rms roughness was estimated to 0.5 nm for typical film thicknesses of 22 nm. As revealed by scanning tunneling microscopy (STM), this roughness is discrete and due to step edges corresponding to the full c-axis length of Fe2Ti. The epitaxial growth implies an …
Molybdenum deposition on TiO2 (110) surfaces with different stoichiometries
1999
Abstract The deposition of ultra thin molybdenum films has been carried out on three different TiO 2 surfaces: a stoichiometric and flat one obtained after annealing, a non stoichiometric and rough surface made by Ar + bombardment and a stoichiometric and rough surface obtained by oxygen bombardment. Whatever the substrate preparation, in situ AES and XPS studies and ex situ AFM and RHEED characterizations have revealed a Stranski–Krastanov growth mode: the completion of three monolayers followed by island growth is observed in any case. The three monolayers are composed of amorphous molybdenum oxide with a molybdenum oxidation state between III and IV. The oxidation of the molybdenum layer…
Superficial oxidation of molybdenum at high pressure and low temperature: RHEED and AES analyses of the molybdenum oxide formation
1991
Abstract Numerous studies relate to the interaction of the molybdenum surface with oxygen at low pressure and high temperature. They give results about oxygen chemisorption, surface facetting and the epitaxial formation of MoO 2 crystallites. This work deals with the interaction of Mo(100), Mo(110) and Mo(111) surfaces with oxygen at high pressure (10 4 Pa) and low temperature (620–820 K). RHEED and AES analyses results prove that, in these oxidation conditions: MoO 2 and non-stoichiometric molybdenum oxide such as Mo 4 O 11 are not evidenced in any of the molybdenum oxidation steps. The MoO 3 phase nucleates directly from any Mo surface. The structure and orientation of MoO 3 nuclei are ch…
Accurate and precise lattice parameters by selected-area electron diffraction in the transmission electron microscope
2009
8 páginas, 6 figuras, 7 tablas.
Interaction of oxygen with Mo(100), Mo(110), and Mo(111) surfaces. RHEED and AES analyses of the molybdenum oxide nucleation and growth
1991
Abstract A study of the nucleation and growth of MoO 3 generated by interaction of oxygen with Mo(100), Mo(110), and Mo(111) single crystalline surfaces is investigated at high oxygen pressure (10 4 Pa) and low temperature (620 to 820 K). The results of RHEED and AES analyses prove that under these oxidation conditions, MoO 3 nucleates directly from the metal without intermediate formation of MoO 2 or nonstoichiometric molybdenum oxide such as Mo 4 O 11 . The structure and orientation of MoO 3 nuclei are characterized in relation with the parent molybdenum surface. On the Mo(110) and Mo(111) surfaces, which are faceting, the nucleation and growth of MoO 3 takes place by successive structura…