Search results for " Silicon"
showing 10 items of 247 documents
Enhancement of photoconversion efficiency in dye-sensitized solar cells exploiting pulsed laser deposited niobium pentoxide blocking layers
2015
Abstract Among all the photovoltaic technologies developed so far, dye-sensitized solar cells are considered as a promising alternative to the expensive and environmentally unfriendly crystalline silicon-based solar cells. One of the possible strategies employed to increase their photovoltaic efficiency is to reduce the charge recombination at the cell conductive substrate through the use of a compact blocking layer. In this paper, we report on the fabrication and characterization of dye-sensitized solar cells employing niobium pentoxide (Nb 2 O 5 ) thin film blocking layer deposited through the pulsed laser deposition technique on conductive substrates. The careful selection of the optimal…
Small Particles and Thin Films of Metals on Ceramic Oxides
1989
This paper is aimed at presenting some recent ideas and experimental results on characterization and properties of small particles and thin films of metals on oxide surfaces. Analysis is restricted to metallic films on well-defined surfaces, mainly monocrystalline surfaces and to ceramic oxides having a marked ionic character. The properties of metallic films obtained by chemical reduction of oxides and those of deposits are compared. Nucleation and growth modes are described. Interfacial properties are analysed in terms of size or thickness effect and in the general framework of the ceramic-metal bonding.
HCl gas gettering for crystalline silicon thin film solar cells
2011
Crystalline silicon thin film (cSiTF) solar cells could be an attractive alternative for standard silicon solar cells. Only a small amount of the expensive high purity silicon is needed for the epitaxial deposition on a low-cost silicon substrate made from e.g. metallurgical grade (MG) or upgraded metallurgical grade (UMG) silicon. The resulting product is called epitaxial wafer equivalent (EpiWE) because it can be processed in a standard wafer cell production. MG-Si and UMG-Si still contain a huge amount of metallic impurities. These impurities have to be removed by gettering methods in order to prevent diffusion into the highly pure active silicon layer during the high-temperature deposit…
Improved stability of black silicon detectors using aluminum oxide surface passivation
2021
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…
Mechanisms of Strong Photoluminescence from Si Nanocrystals
2011
Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction sub-band to the first one.
Ultrathin silicon nanowires for optical and electrical nitrogen dioxide detection
2021
The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even wit…
Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
2018
Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electric…
Broadband light trapping in thin film solar cells with self-organized plasmonic nano-colloids
2015
The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids wi…
Simulation of surface-modified porous silicon photonic crystals for biosensing applications
2012
In this work realistic biosensing structures based on the integration of porous silicon photonic crystals with polymer coating technology are presented. Microcavities and rugate filters are chosen as the photonic crystal configuration. The deposition of a polymer layer on the pore walls of these structures is proposed to improve the selectivity and sensitivity of the sensing function. A complete effective refractive index model including the polymer layer, the target and external effects like silicon oxidation has been developed in order to accurately simulate the structures. It is expected that the proposed structures could be used as low cost, highly integrated and highly sensitive biolog…
Memory effects in MOS capacitors with silicon quantum dots
2001
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …