Search results for " Thin Film"

showing 10 items of 102 documents

Synthesis and Characterization of Syndiotactic Polystyrene-Polyethylene Block Copolymer

2019

The direct synthesis of syndiotactic polystyrene-block-polyethylene copolymer (sPS-b-PE) with a diblock structure has been achieved. The synthetic strategy consists of the sequential stereocontrolled polymerization of styrene and ethylene in the presence of a single catalytic system: cyclopentadienyltitanium(IV) trichloride activated by modified methylaluminoxane (CpTiCl3/MMAO). The reaction conditions suitable for affording the partially living polymerization of these monomers were identified, and the resulting copolymer, purified from contaminant homopolymers, was fully characterized. Gel permeation chromatography coupled with two-dimensional NMR spectroscopy COSY, HSQC, and DOSY confirme…

chemistry.chemical_classificationMaterials sciencePolymers and Plasticsblock copolymerGeneral ChemistryPolymerBlock copolymer; Poly-insertion catalysis; Syndiotactic polystyrene; Thin film morphologysyndiotactic polystyreneArticlethin film morphologyStyreneGel permeation chromatographylcsh:QD241-441chemistry.chemical_compoundchemistryPolymerizationlcsh:Organic chemistryTacticityPolymer chemistryCopolymerLiving polymerizationPolystyrenepoly-insertion catalysisPolymers
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Water dissociation and water-gas shift energetics on MgO, MgO/Ag and Au/MgO/Ag surfaces

2011

Water dissociation and the energetics of the WGS reaction on a bulk MgO, an Ag supported MgO thin film and Au/MgO/Ag surfaces is studied based on the density functional theory. The literature results for water splitting on MgO and MgO/Ag surfaces with a step type defect are repeated and further analysis on the origin of the energetically favored dissociative water adsorption are made. The reactivity towards water dissociation on the stepped MgO and MgO/Ag surfaces is attributed to four contributing factors: 1. The change in the interlayer distance of the surface in dissociative adsorption is diminished on the stepped surfaces compared to the flat surfaces. On the flat surfaces the dissociat…

energetiikkaMgO thin filmMgO surfacewater-gas shiftfysiikkaDFTwater dissociationAu cluster
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The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

2022

This research is funded by the Latvian Council of Science project “Epitaxial Ga2O3 thin films as ultrawide bandgap topological transparent electrodes for ultraviolet optoelectronics” No. lzp-2020/1-0345. S.O. was supported by the European Union’s Horizon 2020 program, under Grant Agreement No. 856705 (ERA Chair “MATTER”). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².

gallium oxidegallium oxide; MOCVD; thin films; UWBG materials; nucleation layernucleation layerUWBG materialsthin filmsMOCVDGeneral Materials Science:NATURAL SCIENCES::Physics [Research Subject Categories]Materials; Volume 15; Issue 23; Pages: 8362
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Enhanced Thin-Film Transistor Performance by Combining 13,6-N-Sulfinylacetamidopentacene with Printed PEDOT:PSS Electrodes

2011

Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N-sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/Ioff ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V−1 s−1, 105, and −4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 μm long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present …

inkjet printingMaterials scienceOrganic thin film transistorbusiness.industryGeneral Chemical EngineeringTransistorGeneral ChemistryDielectriclaw.inventionThreshold voltagePentacenechemistry.chemical_compoundPEDOT:PSSchemistryThin-film transistorlawElectrodesoluble pentaceneMaterials ChemistryOptoelectronicsbusinessSaturation (magnetic)Settore CHIM/02 - Chimica Fisica
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Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc

2022

| openaire: EC/H2020/765378/EU//HYCOAT We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process.…

kalvot (tekniikka)Atomic layer depositionGeneral Chemical EngineeringGeneral Chemistryatomikerroskasvatusdepositionthin filmsMaterials ChemistryDiethyl zincprecursorsohutkalvotfysiikkaIntermetallic Fe4Zn9 thin filmsenergyChemistry of Materials
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Magnetization Dynamics in Proximity-Coupled Superconductor-Ferromagnet-Superconductor Multilayers

2020

In this work, magnetization dynamics is studied in superconductor/ferromagnet/superconductor three-layered films in a wide frequency, field, and temperature ranges using the broad-band ferromagnetic resonance measurement technique. It is shown that in presence of both superconducting layers and of superconducting proximity at both superconductor/ferromagnet interfaces a massive shift of the ferromagnetic resonance to higher frequencies emerges. The phenomenon is robust and essentially long-range: it has been observed for a set of samples with the thickness of ferromagnetic layer in the range from tens up to hundreds of nanometers. The resonance frequency shift is characterized by proximity-…

magneettiset ominaisuudetMaterials sciencesuprajohtavuusFOS: Physical sciencesmagnetization dynamicsGeneral Physics and AstronomyApplied Physics (physics.app-ph)spin wavesmagnonssuprajohteetSuperconductivity (cond-mat.supr-con)MagnetizationCondensed Matter::Materials ScienceferromagnetsCondensed Matter::SuperconductivityAnisotropySuperconductivityMagnonicsMagnetization dynamicsCondensed matter physicstype-II superconductorsCondensed Matter - SuperconductivityPhysics - Applied PhysicsFerromagnetic resonanceMagnetic anisotropyFerromagnetismproximity effectmultilayer thin filmsCondensed Matter::Strongly Correlated ElectronsohutkalvotPhysical review applied
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Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …

2019

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge

optical propertiesMaterials scienceAnnealing (metallurgy)Analytical chemistryEpitaxylcsh:TechnologyArticleAnnealingAtomic layer depositionatomic layer deposition (ALD)General Materials ScienceThin filmlcsh:Microscopylcsh:QC120-168.85lcsh:QH201-278.5Optical propertieslcsh:TAtmospheric temperature rangeatomikerroskasvatusAmorphous solidAtomic layer deposition (ALD)lcsh:TA1-2040lcsh:Descriptive and experimental mechanicsannealinglcsh:Electrical engineering. Electronics. Nuclear engineeringCrystalliteohutkalvotlcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971StoichiometryZnS thin films
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High pentacene transistor performance by engeneering morphology of solution processed thin films

2010

organic electronics thin film transistorsSettore CHIM/02 - Chimica Fisica
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Solution processes for plastic thin film transistors

2009

plastic electronics nanotechnology thin film transistorsSettore CHIM/02 - Chimica Fisica
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Rayleigh-instability-driven dewetting of thin Au and Ag films on indium-tin-oxide surface under nanosecond laser irradiations

2013

Investigations have been carried out on laser-beam-induced nanoparticle (NP) formation in thin (5 nm) Au and Ag films on indium-tin-oxide substrate. After the irradiation the films were observed to break-up into NPs through a dewetting mechanism. This mechanism was investigated as a Rayleigh-instability- driven process. In fact, for each used laser fluence, the resulting Au and Ag NPs' mean size and surface-to-surface mean distance were quantified and correlated between them in the framework of the Rayleigh-instability theory showing an excellent agreement. © The Institution of Engineering and Technology 2013.

quantitative analysiAnalytical chemistrymetallic thin filmsNanoparticleAg filmSubstrate (electronics)IndiumSettore ING-INF/01 - Elettronicaindium tin oxidePhysics::Fluid DynamicsGeneral Materials Sciencesilver nanoparticle articleDewettingRayleigh–Taylor instabilityOxide filmNuclear Experimentdegradationparticle sizeCondensed Matter PhysicsIndium tin oxideNanolithographydewettingnanomaterialIndium-tin-oxide substratechemical reactionMaterials sciencesurface propertyBiomedical EngineeringBioengineeringMean size GoldFluencenanoanalysiCondensed Matter::Materials ScienceOpticsMean distanceIrradiationtheoryLaser theorymetal nanoparticlerayleigh instability theorybusiness.industrylaser beam effectsLaser fluencelasernanofilmTin Silver gold nanoparticlenanofabricationnanoparticlesDe-wettingbusiness
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