6533b838fe1ef96bd12a5345

RESEARCH PRODUCT

Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various annealing treatments

Tomasz DurejkoMałgorzata NorekMatti PutkonenTimo SajavaaraStanisław JóźwiakUrszula ChodorowMaksymilian Włodarski

subject

optical propertiesMaterials scienceAnnealing (metallurgy)Analytical chemistryEpitaxylcsh:TechnologyArticleAnnealingAtomic layer depositionatomic layer deposition (ALD)General Materials ScienceThin filmlcsh:Microscopylcsh:QC120-168.85lcsh:QH201-278.5Optical propertieslcsh:TAtmospheric temperature rangeatomikerroskasvatusAmorphous solidAtomic layer deposition (ALD)lcsh:TA1-2040lcsh:Descriptive and experimental mechanicsannealinglcsh:Electrical engineering. Electronics. Nuclear engineeringCrystalliteohutkalvotlcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971StoichiometryZnS thin films

description

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge

yearjournalcountryeditionlanguage
2019-09-30
10.3390/ma12193212https://cris.vtt.fi/en/publications/6320e180-46da-47ab-bd68-6d74b54c761e