Search results for " crystal structure"
showing 10 items of 129 documents
Enhanced optical properties of Cd–Mg-co-doped ZnO nanoparticles induced by low crystal structure distortion
2020
Abstract The growth of CdxMg0.125-xZn0.875O nanoparticles with yellow-orange luminescence is achieved up to 2.5 at. % Cd via a modified sol–gel process. X-ray diffraction analysis confirmed that all the nanoparticles have the hexagonal wurtzite structure. It is found that Cd doping has a considerable effect on the crystal size, microstrain, band gap, and photoluminescence of the Mg0·125Zn0·875O structure, originating from a preferred crystallographic orientation along the (101) plane of the wurtzite structure. The shift and broadening of the E2(high) mode observed in the Raman spectra due to growth-induced strain corroborates the small distortion observed in the X-ray diffraction data. The …
Structural and chemical characterization of CdSe-ZnS core-shell quantum dots
2018
Abstract The structural and compositional properties of CdSe-ZnS core-shell quantum dots (QDs) with a sub-nm shell thickness are analyzed at the atomic scale using electron microscopy. QDs with both wurtzite and zinc blende crystal structures, as well as intermixing of the two structures and stacking faults, are observed. High-angle annular dark-field scanning transmission electron microscopy suggests the presence of a lower atomic number epitaxial shell of irregular thickness around a CdSe core. The presence of a shell is confirmed using energy dispersive X-ray spectroscopy. Despite the thickness irregularities, the optical properties of the particles, such as photoluminescence and quantum…
Optical emission of InAs nanowires
2012
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to…
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Valence-band splitting energies in wurtzite InP nanowires : Photoluminescence spectroscopy and ab initio calculations
2010
We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, r…
Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
2018
International audience; In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7-14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study o…
Application of Room Temperature Photoluminescence From ZnO Nanorods for Salmonella Detection
2014
ZnO nanorods grown by gaseous-disperse synthesis are confirmed by XRD analysis to have the wurtzite crystal structure. The obtained crystallites, as found from SEM studies, are 57 +/- 9 nm in diameter and 470 +/- 30 nm long on the average. Two emission bands of photoluminescence from ZnO nanorods observed at room temperature are centered at 376 and 520 nm. A biosensitive layer is prepared by immobilization of anti-Salmonella antibodies from liquid solutions on the ZnO surface. Immobilization of the biosensitive layer onto ZnO nanorods is found to increase the intensity of PL. After further reaction with Salmonella antigens (Ags), the PL intensity is found to decrease proportional to Ag conc…
Optical properties of nitride nanostructures
2010
In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…
Optical phonon modes of wurtzite InP
2013
Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.
Modelling leaky photonic wires: a mode solver comparison
2006
We present results from a mode solver comparison held within the framework of the European COST P11 project. The structure modelled is a high-index contrast photonic wire in silicon-oninsulator subject to substrate leakage. The methods compared are both in-house developed and commercial, and range from effective index and perturbation methods, over finite-element and finite-difference codes, beam propagation methods, to film mode matching methods and plane wave expansion methods.