Search results for " doping"
showing 10 items of 89 documents
DESIGN, SYNTHESIS AND ATOMIC/ELECTRONIC STRUCTURAL ANALYSIS OF HYBRID HALIDE PSEUDO-PEROVSKITES: PERSPECTIVES AND OPEN ISSUES FOR NOVEL THERMOELECTRI…
2022
Thermally induced doping in controlled atmosphere on Graphene
2017
Since its experimental breakthrough discovery in 2004, Graphene (Gr) paved the way for the study of the "flatland" of two dimensional (2D) materials. These systems are an emerging topic of interest in solid state physics and amterial sciences, but nont only, and today count a family of monoatomic layer of C atoms in hexgonal honey comb crystalline structure.
Fighting doping: sports and criminal law regulatory systems compared
2015
L’OPERATIVITÀ DEL VINCOLO DI GIUSTIZIA NEL REATO DI DOPING
2014
L’epoca della dipendenza… sportiva
2014
Boron doping of silicon rich carbides: Electrical properties
2013
Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Sport e devianza: il doping
2014
UNa delle forme in cui si declina la devianza nelo sport. Il doping in Europa e in Italia
Self-cleaning materials active in the visible range based on porphyrin-sensitised titanium dioxide
2016
In the last decades, nanostructured semiconductors played a central role in the material science scene because of their numerous applications spanning from renewable energy to organic/hybrid electronics up to photocatalysis. Titanium dioxide is one of the most used semiconductors because of its low cost, chemical stability, sustainability and versatility. Indeed, it is widely employed as photo-active or charge- transporting material in electronic devices, as photocatalyst in water de-pollution treatments etc.. Remarkably, one of the most interesting application of titanium dioxide consists of the protection and conservation of cultural heritages. Actually, TiO2 photocatalytic properties are…
Synthesis and luminescent properties of Mn-doped alpha-tricalcium phosphate
2021
This project has received funding from European Social Fund (project No 09.3.3-LMT-K-712-19-0069) under grant agreement with the Research Council of Lithuania (LMTLT). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART². The World Federation of Scientists is highly acknowledged for the National Scholarship to AZ. © 2021. This work is licensed under a CC BY-NC-ND 4.0 license.