Search results for " electronics"

showing 10 items of 580 documents

Design of Bistable Gold@Spin‐Crossover Core–Shell Nanoparticles Showing Large Electrical Responses for the Spin Switching

2019

<p>A simple protocol to prepare core-shell gold@spin-crossover (Au@SCO) nanoparticles (NPs) based on the 1D spin-crossover [Fe(Htrz)<sub>2</sub>(trz)](BF<sub>4</sub>) coordination polymer is reported. The synthesis relies on a two-step approach consisting on a partial surface ligand substitution of the citrate-stabilized Au NPs followed by the controlled growth of a very thin layer of the SCO polymer. As a result, colloidally stable core@shell spherical NPs of 19 nm in size exhibiting a narrow distribution in sizes have been obtained, revealing a switchable SCOshell of <i>ca.</i>4 nm. Temperature-dependent charge transport measurements of an electri…

Materials scienceSpin statesCoordination polymerNanotecnologiaMechanical EngineeringSpin transitionNanoparticleConductanceMolecular electronics02 engineering and technologyCiència dels materials010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceschemistry.chemical_compoundElectrònica molecularDifferential scanning calorimetrychemistryMechanics of MaterialsChemical physicsSpin crossoverGeneral Materials Science0210 nano-technologyAdvanced Materials
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Hybrid Interfaces in Molecular Spintronics

2018

Molecular/inorganic multilayer heterostructures are gaining attention in molecular electronics and more recently in new generation spintronic devices. The intrinsic properties of molecular materials as low cost, tuneability, or long spin lifetimes were the original reasons behind their implementation. However, the non-innocent role played by these hybrid interfaces is a determinant factor in the device performance. In this account we will give an overview about different types of hybrid molecular system/ferromagnet interfaces, which can be of direct application in molecular spintronics. This includes the insertion of a 2D material in between the molecular system and the ferromagnet. As pers…

Materials scienceSpintronicsGeneral Chemical EngineeringMolecular electronicsNanotechnologyHeterojunction02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesBiochemistry0104 chemical sciencesCondensed Matter::Materials ScienceElectrònica molecularMagnetic moleculesFerromagnetismMaterials Chemistry0210 nano-technologyMolecular materialsMaterialsA determinant
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Supramolecular Order of Solution-Processed Perylenediimide Thin Films

2011

N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), a soluble and air stable n-type molecule, undergoes signifi cant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN 2 molecules. The presence of a pronounced π– π stacking is confi rmed by combining near-edge X-ray absorption fi ne structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measure…

Materials scienceSupramolecular chemistryAnalytical chemistryStackingSEMICONDUCTORSsolution processesSCALING BEHAVIORBiomaterialsACTIVE LAYERSElectrochemistryCHARGE-TRANSPORTThin filmn-Type semiconductorcharge injectionIntermolecular forcesupramolecular electronicsThin FilmCondensed Matter Physicsorganic transistorsXANESSurface energyElectronic Optical and Magnetic MaterialsChemical physicsMOBILITYGROWTHMORPHOLOGYSupramolecular electronicsAbsorption (chemistry)FIELD-EFFECT TRANSISTORSCONJUGATED POLYMERSGALLIUM-ARSENIDEAdvanced Functional Materials
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Polymeric Thin Films for Organic Electronics: Properties and Adaptive Structures

2013

This review deals with the correlation between morphology, structure and performance of organic electronic devices including thin film transistors and solar cells. In particular, we report on solution processed devices going into the role of the 3D supramolecular organization in determining their electronic properties. A selection of case studies from recent literature are reviewed, relying on solution methods for organic thin-film deposition which allow fine control of the supramolecular aggregation of polymers confined at surfaces in nanoscopic layers. A special focus is given to issues exploiting morphological structures stemming from the intrinsic polymeric dynamic adaptation under non-…

Materials scienceSupramolecular chemistryNanotechnologyReviewlcsh:Technologysolution processeslaw.inventionelectronic devices solution processes polymers thin filmslawmorphologyGeneral Materials ScienceElectronicsThin filmlcsh:MicroscopyNanoscopic scaleplastic electronicslcsh:QC120-168.85chemistry.chemical_classificationOrganic electronicslcsh:QH201-278.5lcsh:TTransistorPolymerchemistrythin filmsThin-film transistorlcsh:TA1-2040solar cellslcsh:Descriptive and experimental mechanicstransistorslcsh:Electrical engineering. Electronics. Nuclear engineeringlcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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Transmission Attenuation Power Ratio Analysis of Flexible Electromagnetic Absorber Sheets Combined with a Metal Layer.

2018

Electromagnetic noise absorber sheets have become a solution for solving complex electromagnetic interference (EMI) problems due to their high magnetic losses. This contribution is focused on characterizing a novel structure that is based on an absorber film with a metal layer attached on its top side. Two different absorber compositions were combined with Al and Cu metal layers in order to study the improvement on the performance of these structures, depending on the complex permeability, absorber film thickness, and type of metal. The transmission attenuation power ratio of the absorber films is analyzed and compared to the performance of absorber and metal structures. The measurement pro…

Materials scienceTest fixture02 engineering and technologycomplex permeability01 natural scienceslcsh:TechnologyElectromagnetic interferenceMicrostripArticlelaw.inventioninsertion losslawTransmission line0103 physical sciences0202 electrical engineering electronic engineering information engineeringEddy currentInsertion lossGeneral Materials Sciencemicrostrip lineflexible electromagnetic absorber sheetlcsh:Microscopylcsh:QC120-168.85010302 applied physicslcsh:QH201-278.5power absorptionbusiness.industrylcsh:TAttenuation020206 networking & telecommunicationselectromagnetic interferenceMagnetic fieldlcsh:TA1-2040Optoelectronicsmagnetic materialslcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringbusinesslcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials (Basel, Switzerland)
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Thin Film Organic Thermoelectric Generator Based on Tetrathiotetracene

2017

This is the peer reviewed version of the following article: K. Pudzs, A. Vembris, M. Rutkis, S. Woodward, Adv. Electron. Mater. 2017, 1600429, which has been published in final form at http://onlinelibrary.wi...002/aelm.201600429/full This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.

Materials scienceThin films02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyVacuum depositionSeebeck coefficientThermoelectric effectElectronic engineering:NATURAL SCIENCES:Physics [Research Subject Categories]DopingThin filmOrganic ElectronicsOrganic electronicsThin FilmsThermoelectricsbusiness.industryOrganic electronics021001 nanoscience & nanotechnologyThermoelectric materials0104 chemical sciencesElectronic Optical and Magnetic MaterialsOrganic semiconductorThermoelectric generatorOptoelectronics0210 nano-technologybusinessAdvanced Electronic Materials
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Controlling the mode of operation of organic transistors through side chain engineering

2016

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…

Materials scienceTransconductanceNanotechnologyHardware_PERFORMANCEANDRELIABILITY02 engineering and technologyElectrolyte010402 general chemistry01 natural scienceslaw.inventionelectrochemical transistorlawMD MultidisciplinaryHardware_INTEGRATEDCIRCUITSSide chainConductive polymerMultidisciplinarySubthreshold conductionbusiness.industrysemiconducting polymersTransistor021001 nanoscience & nanotechnologyequipment and supplies0104 chemical sciencesorganic electronicsSemiconductorPhysical SciencesOptoelectronics0210 nano-technologybusinessHardware_LOGICDESIGNOrganic electrochemical transistor
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Assessing Radiation Hardness of SIC MOS Structures

2018

It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.

Materials scienceTransistorPower budgetEngineering physicslaw.inventionchemistry.chemical_compoundchemistrylawPower electronicsLogic gateMOSFETSilicon carbideRadiation hardeningCooling down2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Conformationally rigid molecular and polymeric naphthalene-diimides containing C6H6N2 constitutional isomers

2021

Organic thin films based on naphthalenediimides (NDIs) bearing alkyl substituents have shown interesting properties for application in OLEDs, thermoelectrics, solar cells, sensors and organic electronics. However, the polymorphic versatility attributed to the flexibility of alkyl chains remains a challenging issue, with detrimental implications on the performances. Aryl analogues containing C6H6N2 constitutional isomers are herein investigated as one of the possible way-out strategies. The synthesis of molecular and polymeric species is described, starting from naphthaleneteracarboxyldianhydride with isomeric aromatic amines and hydrazine. The materials are fully characterized by spectrosco…

Materials scienceX ray diffractionStacking02 engineering and technology010402 general chemistry01 natural sciencesNDIUltraviolet visible spectroscopyMaterials ChemistryStructural isomerMoleculeThermal stabilityThin filmPolymerCrystallinityAlkylAmineThin film solar cellchemistry.chemical_classificationOrganic electronicsUltraviolet visible spectroscopySpin coatingGeneral Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesEnergy gapIsomerNondestructive examinationCrystallographychemistry0210 nano-technologyStabilityNaphthalene
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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…

Materials scienceassurance testingRadiation effects02 engineering and technologyHigh-electron-mobility transistorradiation hardness01 natural scienceslcsh:Technologylaw.inventiontotal ionizing dose (TID)lawPower electronics0103 physical sciencesGeneral Materials Sciencelcsh:MicroscopyHigh-electron-mobility transistor (HEMT)Radiation hardeningLeakage (electronics)lcsh:QC120-168.85010302 applied physicsRadiation hardnessAssurance testinghigh-electron-mobility transistor (HEMT)lcsh:QH201-278.5business.industrylcsh:TTransistorWide-bandgap semiconductor021001 nanoscience & nanotechnologyThreshold voltageSemiconductorlcsh:TA1-2040Gallium nitride (GaN)adiation effectsradiation effectsOptoelectronicslcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringTotal ionizing dosegallium nitride (GaN)0210 nano-technologybusinesslcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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