Search results for " layer"
showing 10 items of 1022 documents
Highly textured Gd2Zr2O7 films grown on textured Ni-5at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dep…
2012
Abstract Growth, texture evolution and microstructure dependency of solution derived Gd 2 Zr 2 O 7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture and morphology are investigated in details. It is found that a rotated cube-on-cube epitaxy of Gd 2 Zr 2 O 7 //NiW in-plane texture forms as soon as the (004) out-plane texture appears, implying that epitaxial growth dominates the crystallization processes. Thermal energy plays an important role in minimizing the difference of interfacial energy along two directions in the anisotropic…
Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
2011
Abstract Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinit…
Influence of Anodic and Thermal Barrier Layers on Physicochemical Behavior of Anodic TiO2 Nanotubes
2011
Electrochemical and photo-electrochemical behavior of self-organized TiO2 nanotubes formed in organic solvents have been studied by taking into account the formation of new barrier layers beneath nanotubes either due to the anodic polarization in aqueous solutions or air exposure during high temperature annealing. It has been shown that before annealing, electrochemical and photoelectrochemical answers are dominantly controlled by the physicochemical properties of the anodic barrier layer. Annealing in air at sufficiently high temperatures changes the initial amorphous structure of as-prepared nanotubes and forms a new oxide layer below them due to thermal oxidation of underneath titanium. …
Defects in Martensitic Stainless Steel 1.4031 (EN) Exposed to Friction as Seen by Positron Annihilation
2010
We present experimental results of measurements of the Doppler broadening of annihilation line and positron annihilation lifetimes in martensitic stainless steel 1.4031 (EN) samples exposed to the dry sliding under different loads. In particular, we tested the subsurface zone under the worn surfaces. As a main result, we obtained information about the defect profiles in this zone and the total extent of the damage region induced by the dry sliding.
Ultrathin Anodic Aluminum Oxide Membranes for Production of Dense Sub-20 nm Nanoparticle Arrays
2014
We present a systematic study of membrane structure (pore diameter and arrangement) in anodized aluminum oxide (AAO) layers obtained by anodization voltages 8-20 V in sulfuric and 15-40 V in oxalic acid electrolyte solutions. Anodization of bulk aluminum in sulfuric acid at 10 V potential was found to be optimal for production or ultrathin freestanding membranes with pore diameter in sub-20 nm range. The developed process with slow electrochemical reaction results in AAO membranes with thickness below 70 nm. The minimum required time for formation of continuous AAO membrane was determined and influence of electrolyte concentration on pore diameter in membrane after barrier layer removal ana…
Molecular dynamics investigation of the premelting effects of Lennard-Jones (111) surfaces
1987
Molecular dynamics simulations have been performed to study the premelting effects of noble-gas surfaces (argon) close to but below the bulk melting temperature. In particular, the increase of disorder as a function of temperature at (111) surface has been considered. The truncated Lennard-Jones (6-12) potential is used to describe the interactions between particles. Surface premelting has been analyzed by means of total energies, trajectory plots, mean sequare displacement functions, diffusion coefficients, vacancy concentrations and two-dimensional order parameters. The (111) surface starts to disorder by vacancy formation, which leads to the premelting of the surface layer far below the …
Development of microwave gas sensors
2011
Abstract This work presents a novel approach in gas detection by an original method of microwave transduction. The design of the sensor includes a coplanar grounded wave guide with a gas sensing material to study its sensitivity to ammonia in argon flux. The sensing material can play the role of the substrate or can be deposited as a thin layer on a microstrip structure used in electronics. Submitted to an electromagnetic excitation in microwave energies, the sensor response in the presence of a gas results in a specific modification of the reflected wave (real and imaginary parts). The goals of this study include an examination of the form of the sensitive material and its influence on the…
Hardness and modulus of elasticity of atomic layer deposited Al2O3-ZrO2 nanolaminates and mixtures
2020
This work was funded by the European Regional Development Fund project TK134 “Emerging orders in quantum and nanomaterials”, Estonian Research Agency project PRG4 “Emerging novel phases in strongly frustrated quantum magnets”.
Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
2001
Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…
Efficient Perovskite Light-Emitting Diodes: Effect of Composition, Morphology, and Transport Layers
2018
Organic-inorganic metal halide perovskites are emerging as novel materials for light-emitting applications due to their high color purity, band gap tunability, straightforward synthesis, and inexpensive precursors. In this work, we improve the performance of three-dimensional perovskite light-emitting diodes (PeLEDs) by tuning the emissive layer composition and thickness and by using small-molecule transport layers. Additionally, we correlate PeLED efficiencies to the perovskite structure and morphology. The results show that the PeLEDs containing perovskites with an excess of methylammonium bromide (MABr) to lead bromide (PbBr2) in a 2:1 ratio and a layer thickness of 80 nm have the highes…