Search results for " locali"
showing 10 items of 539 documents
Time course of ERP generators to syllables in infants: A source localization study using age-appropriate brain templates
2011
article i nfo Event-related potentials (ERPs) have become an important tool in the quest to understand how infants pro- cess perceptual information. Identification of the activation loci of the ERP generators is a technique that pro- vides an opportunity to explore the neural substrates that underlie auditory processing. Nevertheless, as infant brain templates from healthy, non-clinical samples have not been available, the majority of source localization studies in infants have used non-realistic head models, or brain templates derived from older children or adults. Given the dramatic structural changes seen across infancy, all of which profoundly affect the electrical fields measured with …
Experimental analysis of acoustical properties of irregular cavities using laser refracto-vibrometry
2018
International audience; In this paper, the Scanning Laser Doppler Vibrometer (SLDV) is used to measure acoustic pressure in small regions of cavities for the study of acoustical localization. It is shown that this optical method leads to interesting information on localized acoustical modes inside irregular cavities, which are very difficult to observe using conventional microphone measurements. Indeed, localization regions are often of comparable size or even smaller than a typical microphone which can make this type of sensor intrusive. The SLDV is used to measure sound pressure after deriving the refracto-vibrometry method from its standard use. Data are obtained in a large area with a h…
A phase-field model for strain localization analysis in softening elastoplastic materials
2019
Abstract The present paper deals with the localization of strains in those structures consisting of materials exhibiting plastic softening response. It is assumed that strain localization develops in a finite thickness band separated from the remaining part of the structure by weak discontinuity surfaces. In view of the small thickness of the band with respect to the dimensions of the structure, the interphase concept is used for the mechanical modeling of the localization phenomenon. We propose a formulation for the quasi-static modeling of strain localization based on a phase-field approach. In this sense, the localization band is smeared over the volume of the structure and a smooth tran…
Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene
2021
The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass …
Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
2012
We present computational results for strain effects on charge carrier confinement in Ge${}_{x}$Si${}_{1\ensuremath{-}x}$ quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced sep…
Silicon quantum point contact with aluminum gate
2000
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and A…
Investigation and modeling of the anomalous yield point phenomenon in pure tantalum
2014
International audience; The monotonic and cyclic behavior of commercially pure tantalum has been investigated at room temperature, in order to capture and understand the occurrence of the anomalous yield point phenomenon. Interrupted tests have been performed, with strain reversals (tensile or compressive loading) after an aging period. The stress drop is attributed to the interactions between dislocations and solute atoms (oxygen) and its macroscopic occurrence is not systematically observed. InfraRed Thermography (IRT) measurements supported by Scanning Electron Microscopy (SEM) pictures of the polished gauge length of a specimen during an interrupted tensile test reveal the nucleation an…
Anomalous localized resonance using a folded geometry in three dimensions
2013
If a body of dielectric material is coated by a plasmonic structure of negative dielectric material with nonzero loss parameter, then cloaking by anomalous localized resonance (CALR) may occur as the loss parameter tends to zero. It was proved in other papers by authors that if the coated structure is circular (2D) and dielectric constant of the shell is a negative constant (with loss parameter), then CALR occurs, and if the coated structure is spherical (3D), then CALR does not occur. The aim of this paper is to show that the CALR takes place if the spherical coated structure has a specially designed anisotropic dielectric tensor. The anisotropic dielectric tensor is designed by unfolding …
Some observations on the regularizing field for gradient damage models
2000
Gradient enhanced material models can potentially preserve well-posedness of incremental boundary value problems also after the onset of strain softening. Gradient dependent constitutive relations are rooted in the assumption that some scalar or tensor field, which appears in the yield function, has to be enriched by adding a term involving its second-order gradient field. For gradient-dependent plasticity this term is universally accepted to be the equivalent plastic strain. For gradient-dependent damage models different choices have been presented in the literature. They all possess the desired regularization of the solution, but they are not identical as regards the structural response. …
First record of Synedropsis roundii (Bacillariophyta, Fragilariaceae) in the Mediterranean region
2019
Populations of the fragilarioid diatom Synedropsis roundii are described from the phytoplankton of the Albufera of Valencia, a large and shallow eutrophic lagoon in the Spanish Mediterranean coast. The specimens collected are described and illustrated with light and scanning electron microscopy. This is the first documented record of this species since its description, and the first illustrated record of the genus in the Mediterranean region. The Albufera lagoon and the type locality of the species (Imboassica Lagoon, SE Brazil) are similar in some ecological features. The ecological and biogeographical implications of this finding are briefly discussed.