6533b861fe1ef96bd12c459d
RESEARCH PRODUCT
Silicon quantum point contact with aluminum gate
Anders KristensenMonika EmmerlingMartin KampMika PrunnilaB. S. SørensenJouni AhopeltoPoul Erik LindelofS EränenAnders GustafssonAntti ManninenAlfred Forchelsubject
Materials scienceSiliconCondensed matter physicsMechanical EngineeringQuantum point contactSilicon on insulatorchemistry.chemical_elementConductanceCondensed Matter PhysicsWeak localizationchemistryMechanics of MaterialsGeneral Materials ScienceWaferLithographyUniversal conductance fluctuationsdescription
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-05-01 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |