Search results for " materia"
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Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
X-ray and dielectric characterization of Co doped tetragonal BaTiO3 ceramics
2016
ABSTRACTThe crystal structure modifications of BaTiO3 induced by cobalt doping were studied. The polycrystalline (1 − x)BaTiO3 + xCo2O3 samples, with x ≤ 10 wt.%, were prepared by high temperature sintering conventional method. According to X-ray phase and structural characterization, performed by full-profile Rietveld refinement technique, all synthesized samples showed tetragonal symmetry perovskite structure with minor amount of parasitic phases. Pure single-phase composition has been detected only in the low level of doping BaTiO3. It was indicated that substitution of Co for the Ti sites in the (1 − x)BaTiO3 + xCo2O3 series led to decrease of tetragonality (c/a) of the BaTiO3 perovskit…
Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5
2020
High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good …
Reactive Sintering of molybdenum disilicide by Spark Plasma Sintering from mechanically activated powder mixtures: Processing parameters and properti…
2008
Abstract Dense molybdenum disilicide with a nano-organized microstructure was synthesized by mechanical activation, by producing nanostructured agglomerates of a 1:2 mixture of Mo and Si, followed by the synthesis/consolidation in one step using SPS technology. In order to synthesize a dense molybdenum disilicide with a perfectly controlled microstructure, an investigation of the influence of Spark Plasma Sintering processing parameters (temperature, heating rate, mechanical pressure and holding time) on the chemical composition and the microstructure characteristics has been performed. The present work shows also that the so-obtained materials present better oxidation resistance in compari…
Evaluation of nano/submicro pores in suspension plasma sprayed YSZ coatings
2019
Abstract Nano-submicro pores could considerably influence the coating performances and thus should be properly designed for the intended applications. However, it is challenging to characterize accurately such small pores in coatings. In this study, YSZ coatings were firstly manufactured by suspension plasma spray (SPS) and the nano-submicro pores in as-prepared coatings were investigated using Ultra-small-angle X-ray scattering (USAXS). Afterwards, a multivariate analysis on the effect of five different process parameters was carried out. The two main results showed that: 1) the nano-submicro pores content in coatings has a negative correlation with suspension mass load and powder size, an…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Choice of the detectors for light impurities plasma studies at W7-X using ‘CO Monitor’ system
2019
Abstarct The ‘CO Monitor’ is a new spectrometer system dedicated for the continuous measurements of line intensities of carbon, oxygen, boron and nitrogen at the fusion plasma experiment Wendelstein 7-X (W7-X). Its main purpose is to deliver constant information about indicated elements with high time resolution (better than 1 ms), but low spatial resolution since the line shapes are not going to be investigated. The system consists of four independent channels, each equipped with dispersive element dedicated for measurement of selected line of interest. In order to perform the highest efficiency of the ‘CO Monitor’ system, it is essential to choose the proper detector type for this task. T…
Gel combustion synthesis and magnetic properties of CoFe2O4, ZnFe2O4, and MgFe2O4 using 6-aminohexanoic acid as a new fuel
2020
Abstract For the first time, 6-aminohexanoic acid is used as an alternative fuel in the synthesis of the spinel ferrites with compositions CoFe2O4, ZnFe2O4 and MgFe2O4 using gel combustion synthesis with different oxidizer-to-fuel (O/F) ratios. The gel precursors were studied by differential thermal analysis and thermogravimetry (DTA/TG), which showed that the ignition temperature depends on the gel precursor, being around 230 °C, 130 °C and 275 °C for CoFe2O4, ZnFe2O4, and MgFe2O4, respectively. These results showed than the 6-aminohexanoic acid has an ignition temperature lower than the urea and the citric acid when were used in the synthesis of the spinel ferrites by gel combustion. More…
Half-Heusler compounds: novel materials for energy and spintronic applications
2012
Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…