Search results for " metal"

showing 10 items of 2159 documents

Tandem laser-gas metal arc welding joining of 20 mm thick super duplex stainless steel: An experimental and numerical study

2020

The present work covers the topic of strains and stresses prediction in case of welded steel structures. Steel sheets of 20 mm thickness made in UR™2507Cu are welded using a laser and gas metal arc welding processes combination. The focused laser beam leads the arc in a Y-shape chamfer geometry. Both sources are 20 mm apart from each other in order to avoid any synergic effect with each other. In order to predict residual strain, a 3D unsteady numerical simulation has been developed in COMSOL finite element software. A volume heat source has been identified based on the temperature measurements made by 10 K-type thermocouples, implanted inside the workpiece. The 50 mm deep holes are drille…

010302 applied physicsMaterials scienceMaterials processingTandemMechanical EngineeringSteel structures02 engineering and technologyWelding021001 nanoscience & nanotechnologyLaser01 natural sciencesFinite element methodGas metal arc weldinglaw.inventionlaw0103 physical sciencesGeneral Materials ScienceComposite material0210 nano-technologyProceedings of the Institution of Mechanical Engineers, Part L: Journal of Materials: Design and Applications
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Synthesis of FeAl Hetero-Nanostructured Bulk Parts via Spark Plasma Sintering of Milled Powder

2006

AbstractSpark plasma sintering (SPS) has been used in order to introduce nanocrystalline grains within fully dense FeAl consolidated parts. Hetero-nanostructured parts, consisting of nano, ultrafine and micrometric grains, have been successfully processed when milled - Y2O3 reinforced - FeAl powder was used. The large temperature differences that are spontaneously generated during the SPS process as well as the use of milled powder account for the formation of such interesting structures. The grain size distribution - that is suggested to be very potent to improve both strength and ductility - could be significantly modified by a proper selection of sintering temperature and holding time.

010302 applied physicsMaterials scienceMetallurgySinteringSpark plasma sinteringFEAL02 engineering and technology021001 nanoscience & nanotechnologyMicrostructure01 natural sciencesNanocrystalline material[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][SPI.MECA.MEMA] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph][PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph][PHYS.MECA.MEMA] Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph]Powder metallurgy0103 physical sciencesNano-[SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph][PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][CHIM.CRIS]Chemical Sciences/Cristallography[CHIM.CRIS] Chemical Sciences/Cristallography0210 nano-technologyDuctilityComputingMilieux_MISCELLANEOUS
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Efficiency of H center stabilization in alkali halide crystals at low-temperature uniaxial deformation

2020

The efficiency of stabilization of H centers as well as its dependence on the degree of uniaxial deformation are considered within the framework of the modified geometric model of alkali halides. It is shown that stabilization of H centers is difficult in KI and RbI crystals, while in other NaCl-type crystals it becomes quite probable. Under uniaxial deformation, the interstitial space, in which the defect will be located, decreases, and the efficiency decrease. In the case of cesium halides, the orientation of the H centers takes place predominantly in the direction; therefore, the criteria for their stabilization differ from the NaCl-type alkali halide crystals. According to calculations,…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)General Physics and AstronomyHalideUniaxial compressionchemistry.chemical_elementCenter (group theory)Deformation (meteorology)Alkali metal01 natural sciencesMolecular physicsIonchemistryCaesium0103 physical sciences010306 general physicsLow Temperature Physics
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Variable-charge method applied to study coupled grain boundary migration in the presence of oxygen

2009

International audience; One of the important differences between simulation and experiments in grain boundary (GB)-dominated metallic structures is the lack of impurities such as oxygen in computational samples. A modified variable-charge method [Elsener A, Politano O, Derlet PM, Van Swygenhoven H. Modell Simul Mater Sci Eng 2008;16:025006] based on the Streitz and Mintmire approach [Streitz FH, Mintmire JW. Phys Rev B 1994;50:11996] is used to study coupled GB motion in an Al bicrystal with a [1 1 2] symmetrical tilt GB in the presence of substitutional O, and compared with the stick–slip process identified by Cahn and Mishin [Cahn JW, Mishin Y, Suzuki A. Acta Mater 2006;54:4953]. It is found…

010302 applied physicsMaterials sciencePolymers and PlasticsMetals and AlloysBoundary (topology)ThermodynamicsCharge (physics)02 engineering and technology[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyMicrostructure01 natural sciencesElectronic Optical and Magnetic MaterialsShear (sheet metal)Molecular dynamicsImpurityCritical resolved shear stress[ CHIM.MATE ] Chemical Sciences/Material chemistry0103 physical sciencesCeramics and CompositesGrain boundary0210 nano-technology
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HCl gas gettering of low-cost silicon

2013

HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…

010302 applied physicsMaterials scienceSiliconEtching rateInorganic chemistrychemistry.chemical_element02 engineering and technologySurfaces and InterfacesActivation energy021001 nanoscience & nanotechnologyCondensed Matter Physics7. Clean energy01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryTransition metalGetterEtching (microfabrication)0103 physical sciencesMaterials ChemistryWaferElectrical and Electronic Engineering0210 nano-technologyInductively coupled plasma mass spectrometryphysica status solidi (a)
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3D magnetic and thermal fields for in the transformer with homogenised amorphous C-core under high frequency

2017

010302 applied physicsMaterials sciencebusiness.industry020208 electrical & electronic engineeringElectrical engineering02 engineering and technology01 natural sciencesAmorphous solidlaw.inventionlaw0103 physical sciencesThermal0202 electrical engineering electronic engineering information engineeringEddy currentAmorphous metal transformerElectrical and Electronic EngineeringComposite materialbusinessTransformerPRZEGLĄD ELEKTROTECHNICZNY
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Lattice sites of diffused gold and platinum in epitaxial ZnSe layers

2000

Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceScatteringAnnealing (metallurgy)chemistry.chemical_element02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural sciencessymbols.namesakechemistry.chemical_compoundCrystallographyTransition metalchemistry0103 physical sciencessymbolsZinc selenideRutherford scattering0210 nano-technologyPlatinumInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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The Grain Boundary Wetting Phenomena in the Ti-Containing High-Entropy Alloys: A Review

2021

In this review, the phenomenon of grain boundary (GB) wetting by melt is analyzed for multicomponent alloys without principal components (also called high-entropy alloys or HEAs) containing titanium. GB wetting can be complete or partial. In the former case, the liquid phase forms the continuous layers between solid grains and completely separates them. In the latter case of partial GB wetting, the melt forms the chain of droplets in GBs, with certain non-zero contact angles. The GB wetting phenomenon can be observed in HEAs produced by all solidification-based technologies. GB leads to the appearance of novel GB tie lines Twmin and Twmax in the multicomponent HEA phase diagrams. The so-cal…

010302 applied physicsPhase transitionMaterials scienceMining engineering. MetallurgyHigh entropy alloysMetals and AlloysTN1-997Titanium alloyThermodynamics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesphase transitionsContact anglePhase (matter)titanium alloys0103 physical sciencesgrain boundary wettingGeneral Materials ScienceGrain boundaryWetting0210 nano-technologyphase diagramsPhase diagramhigh-entropy alloys
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Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

2017

AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…

010302 applied physicsSiliconMetallurgychemistry.chemical_elementdirectional solidification02 engineering and technologysolar silicon021001 nanoscience & nanotechnology01 natural sciencesMaterialien - Solarzellen und TechnologieKristallisation und Waferingtransition metalsSilicium-PhotovoltaikchemistryImpurityPhotovoltaik0103 physical sciencesPhysical and Theoretical ChemistryNeutron activation analysis0210 nano-technologyfeedstockneutron activation analysis
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Spark Plasma Sintering of Metallic Glasses

2019

Spark plasma sintering (SPS) of metallic glasses (MG) can be quite different from sintering crystalline metallic alloys. Indeed, MG behave differently with increasing temperature, as they encounter a glass transition and devitrification. Their shaping can thus be compared to what can be performed on thermoplastic polymers. SPS is a promising way to prepare bulk parts from amorphous powders, since it allows very fast heating and cooling rates. It gives an advantage to avoid or limit devitrification of the amorphous phase upon the thermal cycle. However, diffusion mechanisms, which generally control densification, are activated at temperatures that are not compatible with MG structural integr…

010302 applied physics[CHIM.MATE] Chemical Sciences/Material chemistryAmorphous metalMaterials scienceDiffusionComposite numberSinteringSpark plasma sintering02 engineering and technology[CHIM.MATE]Chemical Sciences/Material chemistry01 natural sciencesAmorphous solid020303 mechanical engineering & transportsDevitrification0203 mechanical engineering0103 physical sciencesComposite materialGlass transitionComputingMilieux_MISCELLANEOUS
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