Search results for " polar"
showing 10 items of 1091 documents
Lattice Instability and Competing Spin Structures in the Double Perovskite InsulatorSr2FeOsO6
2013
The semiconductor Sr2FeOsO6, depending on temperature, adopts two types of spin structures that differ in the spin sequence of ferrimagnetic iron-osmium layers along the tetragonal c axis. Neutron powder diffraction experiments, 57Fe Mossbauer spectra, and density functional theory calculations suggest that this behavior arises because a lattice instability resulting in alternating iron-osmium distances fine-tunes the balance of competing exchange interactions. Thus, Sr2FeOsO6 is an example of a double perovskite, in which the electronic phases are controlled by the interplay of spin, orbital, and lattice degrees of freedom.
Spin-polarized photoelectrons resonantly excited by circularly polarized light from a fractional Ag film on GaAs(100)
2013
We demonstrate a finite spin polarization of photoelectrons emitted from GaAs(100) covered by a fractional Ag film. The photoemission yield shows a sharp maximum for intermediate coverage and the spin polarization increases with increasing laser intensity. Photoelectrons are excited by circularly polarized 100 fs laser pulses of 800 nm wavelength. We recorded the photoemitted electrons using a photoemission electron microscope combined with a Mott spin polarimeter. The spin polarization is analyzed in dependence on the excitation frequency and intensity and on the average thickness of the silver film. The results are explained by a model combining multiphoton photoemission and optical field…
Unidirectional Spin Hall Magnetoresistance as a Tool for Probing the Interfacial Spin Polarization of Co2MnSi
2019
Materials with high spin polarization, such as Heusler compounds, are required for efficient spintronics. The authors propose an approach to probe the transport spin polarization at interfaces, using the recently discovered unidirectional spin Hall magnetoresistance. They show that insertion of thin Ag(001) layers clearly increases the interfacial spin polarization of the Heusler compound Co${}_{2}$MnSi, which is crucial for giant-magnetoresistance devices.
Doping dependence of spin dynamics of drifting electrons in GaAs bulks
2010
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for differ…
Hyperpolarization of cis ‐ 15 N 2 ‐Azobenzene by Parahydrogen at Ultralow Magnetic Fields**
2021
The development of nuclear spins hyperpolarization, and the search for molecules that can be efficiently hyperpolarized is an active area in nuclear magnetic resonance. In this work we present a detailed study of SABRE SHEATH (signal amplification by reversible exchange in shield enabled alignment transfer to heteronuclei) experiments on 15 N2 -azobenzene. In SABRE SHEATH experiments the nuclear spins of the target are hyperpolarized through transfer of spin polarization from parahydrogen at ultralow fields during a reversible chemical process. Azobenzene exists in two isomers, trans and cis. We show that all nuclear spins in cis-azobenzene can be efficiently hyperpolarized by SABRE at suit…
On the Theory of Domain Structure of Disordered Ferroelectrics
2009
We present a comprehensive analysis of domain structure formation in ferroelectric phase of incipient ferroelectrics with off-center dipole impurities like KTaO 3 :Li, Nb,Na. Our analysis is carried out on the base of effective free energy of disordered ferroelectrics, derived by us earlier. This free energy permits to apply the standard approach to domain structure calculation. Using coupled system of Maxwell equations with those obtained by minimization of above free energy, we calculate the physical characteristics of domain structure as functions of impurity dipoles concentration n. Our theory can be easily generalized for arbitrary temperature and crystal shape including thin films.
Holographic Recording of Surface Relief Gratings on As40S60-xSex Thin Films
2015
The studies of direct holographic recording of the surface relief gratings on amorphous As40S60−xSex thin films are presented. These gratings were created upon exposure to polarized laser beams of various wavelengths (λ = 473 – 650 nm). The orthogonally ±45° linearly polarized light beams were used for recording. The surface structure of the relief gratings was investigated by atomic force microscopy. The influence of laser beam wavelength and spatial frequency of the gratings recorded (grating period ?) on the surface relief gratings formation for every composition was examined.
Symmetry of valence states of Heusler compounds explored by linear dichroism in hard-x-ray photoelectron spectroscopy.
2011
This study reports on the linear dichroism in angular-resolved photoemission from the valence band of the Heusler compounds ${\mathrm{NiTi}}_{0.9}{\mathrm{Sc}}_{0.1}\mathrm{Sn}$ and NiMnSb. High-resolution photoelectron spectroscopy was performed with an excitation energy of $h\ensuremath{\nu}=7.938\text{ }\text{ }\mathrm{keV}$. The linear polarization of the photons was changed using an in-vacuum diamond phase retarder. The valence band spectra exhibit the typical structure expected from first-principles calculations of the electronic structure of these compounds. Noticeable linear dichroism is found in the valence band of both materials, and this allows for a symmetry analysis of the cont…
CMOS plasmonics in WDM data transmission: 200 Gb/s (8 × 25Gb/s) transmission over aluminum plasmonic waveguides
2018
We demonstrate wavelength-division-multiplexed (WDM) 200 Gb/s (8 × 25 Gb/s) data transmission over 100 μm long aluminum (Al) surface-plasmon-polariton (SPP) waveguides on a Si3N4 waveguide platform at telecom wavelengths. The Al SPP waveguide was evaluated in terms of signal integrity by performing bit-error-rate (BER) measurements that revealed error-free operation for all eight 25 Gb/s non-return-to-zero (NRZ) modulated data channels with power penalties not exceeding 0.2 dB at 10−9. To the best of our knowledge, this is the first demonstration of WDM enabled data transmission over complementary-metal-oxide-semiconductor (CMOS) SPP waveguides fueling future development of CMOS compatible …
Tuning the propagation constant by the anti-crossing bandgap prism coupling technique.
2012
A novel plasmonic structure based on an anticrossing bandgap prism coupling technique is proposed. The study has been carried out using photonic crystals based on diffraction gratings (bounded by dielectrics with identical dielectric functions) together with a high refractive index prism to couple the long-range surface plasmon polaritons to photons. We analyse the structure and demonstrate the ability for tuning the propagation constants of plasmon modes by changing the thickness of the gold grating. The comparison to non-bandgap techniques is studied, and the influence of the plasmonic configuration on the plasmon propagation constant is discussed as well. Experimental measurements were a…