Search results for " silicon"
showing 10 items of 247 documents
Planar channeling experiments with electrons at the 855MeV Mainz Microtron MAMI
2008
Abstract Planar channeling has been studied for silicon single crystals at a beam energy of 855 MeV at the Mainz Microtron MAMI. Complex channeling patterns were observed from which the crystal orientation can unambiguously be determined. Photon spectra at (1 0 0), (1 1 0) and (1 1 1) planar channeling were recorded with a 10″ × 10″ NaI detector. The planar (1 1 0) channeling process has been studied as function of the crystal thickness in the range between 7.9 and 270 μm from which a dechanneling length of 18.0 μm and the thickness dependent rechanneling lengths were deduced, employing solutions of the Fokker–Planck equation. A signal derived from high energy bremsstrahlung exhibits a char…
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
The GALILEO γ-ray array at the Legnaro National Laboratories
2021
Abstract GALILEO, a new 4 π high-resolution γ -detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital read-out chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy γ -ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…
Electron Scattering Experiments at the Mainz 300 MeV Linear Accelerator
1970
The Mainz electron scattering facility provides energies between 80 and 300 MeV and scattering angles up to 158° which corres-pond to a useful momentum transfer region 0.4 ≤ q ≤ 3.0 fm−1. The accelerator and analyzing system produce approximately 1 μA average current with the overall resolution in the final spectra of usually 0.15% to 0.30%.
The Beta-Delayed Proton and Gamma Decay of 27P for Nuclear Astrophysics
2013
The creation site of 26Al is still under debate. It is thought to be produced in hydrogen burning and in explosive helium burning in novae and supernovae, and possibly also in the H-burning in outer shells of red giant stars. Also, the reactions for its creation or destruction are not completely known. When 26Al is created in novae, the reaction chain is: 24Mg(p,γ)25AI(β+v)25 Mg(p,γ)26Al, but this chain can be by-passed by another chain, 25Al(p, γ)26Si(p, γ)27P and it can also be destroyed directly. The reaction 26m Al (p, γ)27 Si* is another avenue to bypass the production of 26Al and it is dominated by resonant capture. We find and study these resonances by an indirect method, through the…
Structure of theN=27isotones derived from theAr44(d,p)Ar45reaction
2008
The $^{44}\mathrm{Ar}$($d,p$)$^{45}\mathrm{Ar}$ neutron transfer reaction was performed at $10A$ MeV. Measured excitation energies, deduced angular momenta, and spectroscopic factors of the states populated in $^{45}\mathrm{Ar}$ are reported. A satisfactory description of these properties is achieved in the shell model framework using a new $\mathit{sdpf}$ interaction. The model analysis is extended to more exotic even-$Z$ nuclei down to ${}_{14}^{41}{\mathrm{Si}}_{27}$ to study how collectivity impacts the low-lying structure of $N=27$ neutron-rich nuclei.
SNR measurements of silicon photomultipliers in the continuous wave regime
2014
We report on our Signal-to-Noise Ratio (SNR) measurements carried out, in the continuous wave regime, at different frequencies and at various temperatures, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SNR of SiPMs is given by the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square (RMS) deviation of the same current. In our measurements, we have employed a 10 Hz equivalent noise bandwidth, around the lock-in amplifier reference frequency. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current, while background light …
The Cryogenic AntiCoincidence Detector Project for ATHENA+: An Overview Up to the Present Status
2014
ATHENA+ is a space mission proposal for the next ESA L2-L3 slot. One of the focal plane instruments is the X-ray integral field unit (X-IFU) working in the energy range 0.3–10 keV. It is a multi-array based on TES detectors aimed at characterizing faint or diffuse sources (e.g. WHIM or galaxy outskirt). The X-IFU will be able to achieve the required sensitivity if a low background is guaranteed. The studies performed by GEANT4 simulations depict a scenario where the use of an active anticoincidence (AC) is mandatory to reduce the background expected in L2 orbit down to the goal level of 0.005 cts cm $$^{-2}$$ s $$^{-1}$$ keV $$^{-1}$$ . This is possible using a cryogenic anticoincidence (…
Time-multiplexed chromatic-controlled axial diffractive optical elements
2010
Programmable diffractive optical elements DOEs with axial response have many interesting applications, including diffractive lenses, axicons, and optical tweezers. In all these cases, it is essential to properly select the modulation configuration of the spatial light modulator SLM where the DOE is displayed, in order to avoid the undiffracted zero order component that appears on axis and overlaps the desired axial response. However, in general, the chromatic dispersion in liquid crystal SLMs prevents the cancellation of the zero order for a broadband light source, thus limiting the possibilities for polychromatic program- mable axial DOEs. We operate a ferroelectric liquid crystal on silic…