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RESEARCH PRODUCT

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Eija TuominenI. RiihimäkiVictor OvchinnikovEsa TuovinenMarko Yli-koskiE. M. VerbitskayaJ. NystenAri VirtanenA. PirojenkoP. HeikkilaP. LaitinenKati Lassila-periniZ. LiV. K. EreminJ. StahlF. HönnigerPanja-riina LuukkaEckhart FretwurstAlexander IvanovG. LindstroemP. MehtäläJaakko HärkönenA. ZibelliniS. Nummela

subject

PhysicsNuclear and High Energy PhysicsSiliconAnalytical chemistrychemistry.chemical_elementFloat-zone siliconRadiationLow energychemistryIrradiationInstrumentationRadiation hardeningLeakage (electronics)Diode

description

Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.

yearjournalcountryeditionlanguage
2004-02-01Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
https://doi.org/10.1016/j.nima.2003.11.018