0000000000464933
AUTHOR
P. Laitinen
Particle Detectors made of High Resistivity Czochralski Grown Silicon
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Self-diffusion of silicon in molybdenum disilicide
The self-diffusion of silicon in single crystal MoSi2 was studied by means of a radiotracer technique using the short-lived radioisotope 31Si (half-life ), which was produced and implanted into the samples at the ion-guide isotope separator on-line device at the University of Jyvaskyla in Finland. Diffusion annealing and subsequent serial sectioning of the specimens were performed immediately after the radiotracer implantation. In the entire temperature region investigated (835–1124 K), the 31Si diffusivities in both principal directions of the tetragonal MoSi2 crystals obey Arrhenius laws, where the diffusion perpendicular to the tetragonal axis is faster than parallel to it. In previous s…
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
Detection system for depth profiling of radiotracers
A reliable and efficient detection system essentially needed in the depth profiling of radiotracers consisting of two large PIN-diode arrays has been constructed. The requirements put forward to the detector system and the ability of the PIN-diode array to meet these demands are discussed. A comparison to a conventionally used liquid scintillation detector is presented by measuring an as-implanted 31Si profile in amorphous T21 ceramic by both apparatuses.
Fluence effect on ion-implanted As diffusion in relaxed SiGe
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
Versatile use of ion beams for diffusion studies by the modified radiotracer technique
Abstract In the modified radiotracer technique ion beams within a broad energy range are employed. They include energetic light particles ensuring radioactive isotope production via nuclear reactions, keV-ion implantation of radiotracers and sputtering by low energy heavy ions for depth profiling. If the involved ion–solid interactions are properly taken into account, the technique provides an effective means for solid-state diffusion studies under demanding conditions. The various aspects related to the modified radiotracer technique are surveyed and discussed. The reliability of the procedure is demonstrated by comparisons with corresponding profiles obtained by secondary ion mass spectro…
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Utilisation of a sputtering device for targetry and diffusion studies
A novel device for versatile sputtering applications is described. The apparatus design is realised for fulfilling the demands of both nuclear physics experiment target production and serial sectioning in solid-state diffusion studies with radiotracers. Results of several tests are reported, characterising the devise performance in these two differing applications.
Arsenic diffusion in relaxedSi1−xGex
The intrinsic As diffusion properties have been determined in relaxed ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ epilayers. The properties were studied as a function of composition x for the full range of materials with $x=0,$ 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy ${E}_{a}$ was found to drop systematically from 3.8 eV $(x=0)$ to 2.4 eV $(x=1).$ Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range $0l~xl~0.35$ and that vacancy mechanism dominates diffusion in the composition range $0.35lxl~1.$
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.