6533b83afe1ef96bd12a7a8d
RESEARCH PRODUCT
Fluence effect on ion-implanted As diffusion in relaxed SiGe
P. LaitinenP. LaitinenJ. LikonenJ. RäisänenJ. RäisänenE. Vainonen-ahlgrenI. Riihimäkisubject
010302 applied physicsMaterials scienceSiliconAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesFluenceIonSecondary ion mass spectrometrychemistry0103 physical sciencesRadiation damageDiffusion (business)0210 nano-technologyArsenicdescription
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-11-01 | Europhysics Letters |